A New Highly Efficient Nonlinear Relaxation Scheme for Hydrodynamic MOS Simulations

Meinerzhagen, B.; Bach, K.H.; Bork, Ingo; Eng, W.L.

doi:10.1109/nupad.1992.674086

Cited by 9 publications

(2 citation statements)

References 9 publications

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“…The energy balance transport model (EBTM) follows the derivation by Stratton from the Boltzmann transport equation [10,11,12]. With some assumptions, it will decompose into the hydrodynamic model [13,14,15].…”

Section: Modeling and Simulationmentioning

confidence: 99%

Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

Khadir

Sengouga

Abdelhafidi

2019

Annals of West University of Timisoara - Physics

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The effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. It was found that the current gain values using energy balance model are higher than hydrodynamic and much higher than those corresponding to drift-diffusion. Moreover, decreasing the germanium gradient slope towards the collector side of the base enhances the maximum oscillation frequencies using HD and EB models whilst, they remain stable for DD model.

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Section: Modeling and Simulationmentioning

confidence: 99%

Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

Khadir

Sengouga

Abdelhafidi

2019

Annals of West University of Timisoara - Physics

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“…The Energy Balance Transport Model follows the derivation by Stratton [39,40]. Hydrodynamic model is derived from this model by applying certain assumptions [41,42,43].…”

Section: Hydrodynamic/energy Balance Transport Modelmentioning

confidence: 99%

Study of self-heating effects in GaN HEMTs

Nuttinck

Gebara²,

Laskar³

et al.

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)

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GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional electron gas(2-DEG) with charge density ten times higher than that of GaAs-based HEMT and mobility much higher than Si enables a low on-resistance required for RF devices. Self-heating issues with GaN HEMT and lack of understanding of various phenomena are hindering their widespread commercial development. There is a need to understand device operation by developing a model which could be used to optimize electrical and thermal characteristics of GaN HEMT design for high power and high frequency operation.In this thesis work a physical simulation model of AlGaN/GaN HEMT is developed using commercially available software ATLAS from SILVACO Int. based on the energy balance/hydrodynamic carrier transport equations. The model is calibrated against experimental data. Transfer and output characteristics are the key focus in the analysis along with saturation drain current. The resultant IV curves showed a close correspondence with experimental results. Various combinations of electron mobility, velocity saturation, momentum and energy relaxation times and gate work functions were attempted to improve IV curve correlation. Thermal effects were also investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of GaN HEMTs. The temperature profiles across the device were observed. Hot spots were found along the channel in the gate-drain spacing. These preliminary results indicate that the thermal effects do have an impact on the electrical device characteristics at large biases even though the amount of self-heating is underestimated with respect to ii thermal particle-based simulations that solve the energy balance equations for acoustic and optical phonons as well (thus take proper account of the formation of the hot-spot).The decrease in drain current is due to decrease in saturation carrier velocity. The necessity of including hydrodynamic/energy balance transport models for accurate simulations is demonstrated. Possible ways for improving model accuracy are discussed in conjunction with future research.iii Dedicated to my beloved parents iv ACKNOWLEDGMENTS

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Spherical Harmonics Expansion and Multi-Scale Modeling

Meinerzhagen

Jungemann

2022

Springer Handbooks

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A New Highly Efficient Nonlinear Relaxation Scheme for Hydrodynamic MOS Simulations

Abstract: Until now all nonlinear relaxation schemes that have been used (e.g.[1],[6],[7],[8]) for hydrodynamic MOS simulations showed only low convergence speed. In this paper a new fast converging non1inea.r relaxation scheme for this class of simulation problems is presented.

Cited by 9 publications

References 9 publications

Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

Study of self-heating effects in GaN HEMTs

Spherical Harmonics Expansion and Multi-Scale Modeling

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