A new III–V nanowire-quantum dot single photon source with improved Purcell factor for quantum communication

Mohammadnejad, Shahram; Mahmoudi, Amine; Arab, Hossein

doi:10.1007/s11082-022-03567-1

Cited by 6 publications

(3 citation statements)

References 46 publications

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“…A previous study has shown that QDs incorporated in NWs have pronounced Purcell enhancement when the radius of the NW is above 180 nm . Two different types of QD-NWs PL spectra were observed, as shown in Figure a.…”

Section: Resultsmentioning

confidence: 73%

“…A previous study has shown that QDs incorporated in NWs have pronounced Purcell enhancement when the radius of the NW is above 180 nm. 37 Two different types of QD-NWs PL spectra were observed, as shown in Figure 4a. The blue (upper) spectrum shows a strong and narrow peak at ∼912 nm, which is superimposed on the lower intensity emission from the InP NW, while the red (lower) spectrum clearly shows a QD emission peak (at ∼948 nm) quite separated from the InP NW emission (at ∼912 nm).…”

Section: Resultsmentioning

confidence: 99%

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Scalable Bright and Pure Single Photon Sources by Droplet Epitaxy on InP Nanowire Arrays

Huang,

Horder,

Wong

et al. 2024

ACS Nano

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High-quality quantum light sources are crucial components for the implementation of practical and reliable quantum technologies. The persistent challenge, however, is the lack of scalable and deterministic single photon sources that can be synthesized reproducibly. Here, we present a combination of droplet epitaxy with selective area epitaxy to realize the deterministic growth of single quantum dots in nanowire arrays. By optimization of the single quantum dot growth and the nanowire cavity design, single emissions are effectively coupled with the dominant mode of the nanowires to realize Purcell enhancement. The resonance-enhanced quantum emitter system boasts a brightness of millions of counts per second with nanowatt excitation power, a short radiation lifetime of 350 ± 5 ps, and a high single-photon purity with g (2) (0) value of 0.05 with continuous wave above-band excitation. Finite-difference time-domain (FDTD) simulation results show that the emissions of single quantum dots are coupled into the TM 01 mode of the nanowires, giving a Purcell factor ≈ 3. Our technology can be used for creating on-chip scalable single photon sources for future quantum technology applications including quantum networks, quantum computation, and quantum imaging.

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Section: Resultsmentioning

confidence: 73%

Section: Resultsmentioning

confidence: 99%

Scalable Bright and Pure Single Photon Sources by Droplet Epitaxy on InP Nanowire Arrays

Huang,

Horder,

Wong

et al. 2024

ACS Nano

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show abstract

“…1(d)). In this way, the size of quantum dots (including the diameter and the axial length) can be well-defined by controlling the nanowire diameter and the growth time [31] . For example, the axial length of quantum dots can be controlled from 24 to 44 nm by changing the growth time from 12 to 20 s (see Fig.…”

Section: Self-catalyzed Growth Of Embedded Gaas 1−x Sb X Quantum Dotsmentioning

confidence: 99%

Embedded high-quality ternary GaAs_1−xSb_x quantum dots in GaAs nanowires by molecular-beam epitaxy

Hou,

Wen,

et al. 2024

J. Semicond.

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Semiconductor quantum dots are promising candidates for preparing high-performance single photon sources. A basic requirement for this application is realizing the controlled growth of high-quality semiconductor quantum dots. Here, we report the growth of embedded GaAs1−x Sb x quantum dots in GaAs nanowires by molecular-beam epitaxy. It is found that the size of the GaAs1−x Sb x quantum dot can be well-defined by the GaAs nanowire. Energy dispersive spectroscopy analyses show that the antimony content x can be up to 0.36 by tuning the growth temperature. All GaAs1−x Sb x quantum dots exhibit a pure zinc-blende phase. In addition, we have developed a new technology to grow GaAs passivation layers on the sidewalls of the GaAs1−x Sb x quantum dots. Different from the traditional growth process of the passivation layer, GaAs passivation layers can be grown simultaneously with the growth of the embedded GaAs1−x Sb x quantum dots. The spontaneous GaAs passivation layer shows a pure zinc-blende phase due to the strict epitaxial relationship between the quantum dot and the passivation layer. The successful fabrication of embedded high-quality GaAs1−x Sb x quantum dots lays the foundation for the realization of GaAs1−x Sb x -based single photon sources.

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Investigation of the confined states and oscillator strength of conical quantum dots with wetting layer embedded in nanowire

Rahimi

Vahdani

2022

Opt Quant Electron

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A new III–V nanowire-quantum dot single photon source with improved Purcell factor for quantum communication

Cited by 6 publications

References 46 publications

Scalable Bright and Pure Single Photon Sources by Droplet Epitaxy on InP Nanowire Arrays

Scalable Bright and Pure Single Photon Sources by Droplet Epitaxy on InP Nanowire Arrays

Embedded high-quality ternary GaAs_1−xSb_x quantum dots in GaAs nanowires by molecular-beam epitaxy

Investigation of the confined states and oscillator strength of conical quantum dots with wetting layer embedded in nanowire

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A new III–V nanowire-quantum dot single photon source with improved Purcell factor for quantum communication

Cited by 6 publications

References 46 publications

Scalable Bright and Pure Single Photon Sources by Droplet Epitaxy on InP Nanowire Arrays

Scalable Bright and Pure Single Photon Sources by Droplet Epitaxy on InP Nanowire Arrays

Embedded high-quality ternary GaAs1−x Sb x quantum dots in GaAs nanowires by molecular-beam epitaxy

Investigation of the confined states and oscillator strength of conical quantum dots with wetting layer embedded in nanowire

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Embedded high-quality ternary GaAs_1−xSb_x quantum dots in GaAs nanowires by molecular-beam epitaxy