A New InP–InGaAs HBT With a Superlattice-Collector Structure

Chen, Jing-Yuh; Guo, Der-Feng; Cheng, Shiou–Ying; Lee, Kuan-Ming; Chen, Chun-Yuan; Chuang, Hung-Ming; Fu, Ssu-Yi; Liu, Wen‐Chau

doi:10.1109/led.2004.826978

Cited by 10 publications

(2 citation statements)

References 11 publications

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“…Recently, InGaAs-based heterojunction bipolar transistors ͑HBTs͒ and high electron mobility transistors have attracted considerable attention because of their high-speed performance and high current handling capability. [1][2][3][4] For InP/InGaAs-based single HBTs with an InGaAs basecollector ͑B-C͒ homojunction, the low breakdown voltage arising from the high impact ionization rate in the narrow bandgap InGaAs collector becomes as a drawback for power application. Therefore, double HBTs ͑DHBTs͒ have been proposed and fabricated to improve the breakdown characteristics.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Chen

Lee

et al. 2008

Journal of Applied Physics

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The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations. Due to the insertion of a step-graded InAlGaAs collector structure at the base-collector heterojunction, the usually observed switching and hysteresis phenomena in InP/InGaAs-based HBTs are not seen in the studied device. The temperature-dependent electron impact ionization characteristics are also investigated. Above all, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.

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Section: Introductionmentioning

confidence: 99%

Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Chen

Lee

et al. 2008

Journal of Applied Physics

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show abstract

“…O VER the past years, InGaAs-based heterojunction bipolar transistors (HBTs) have attracted significant interest for microwave and low-power digital applications due to the excellent transport properties of the InGaAs material [1]- [4]. However, the intrinsic disadvantage of low breakdown voltage and high output conductance limits their applications in lowvoltage low-power dissipation digital circuits.…”

Section: Introductionmentioning

confidence: 99%

A New InP/InGaAs Double Heterojunction Bipolar Transistor With a Step-Graded InAlGaAs Collector Structure

Chen

Cheng

Hung

et al. 2008

IEEE Electron Device Lett.

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An interesting InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs layer at the base-collector (B-C) heterojunction is fabricated and studied. Simulated results reveal that the potential spike at the B-C heterointerface is completely eliminated. Experimentally, the operation regime is wider than 11 decades in magnitude of the collector current (I C = 10 −12 A to I C = 10 −1 A). Furthermore, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. In the microwave characteristics, the unity current gain cutoff frequency f T = 72.7 GHz and the maximum oscillation frequency f max = 50 GHz are achieved for a nonoptimized device (A E = 6 × 6 µm 2 ).

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Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor

Chu

Cheng

Chen

et al. 2008

Superlattices and Microstructures

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A New InP–InGaAs HBT With a Superlattice-Collector Structure

Cited by 10 publications

References 11 publications

Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

A New InP/InGaAs Double Heterojunction Bipolar Transistor With a Step-Graded InAlGaAs Collector Structure

Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor

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