2011
DOI: 10.1016/j.mejo.2011.05.006
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A new inverter-based charge pump circuit with high conversion ratio and high power efficiency

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Cited by 6 publications
(4 citation statements)
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“…For making a better comparison, the charge pump circuit of Hwang et al (2011) is also simulated in 180 nm CMOS technology. The output voltages of Dickson charge pump, the charge pump presented by Hwang et al (2011) and the improved charge pump Table 2 at 1 MHz frequency with different load resistances.…”
Section: Simulation Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…For making a better comparison, the charge pump circuit of Hwang et al (2011) is also simulated in 180 nm CMOS technology. The output voltages of Dickson charge pump, the charge pump presented by Hwang et al (2011) and the improved charge pump Table 2 at 1 MHz frequency with different load resistances.…”
Section: Simulation Resultsmentioning
confidence: 99%
“…The output voltages of Dickson charge pump, the charge pump presented by Hwang et al (2011) and the improved charge pump Table 2 at 1 MHz frequency with different load resistances. As it is clear, the improved charge pump has higher voltage conversion for higher load resistances.…”
Section: Simulation Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In gate-control (biasing) [67][68][69][70][71], the gate voltage of the Nth,cp stage is provided through a voltage potential generated internally from a higher node in the charge-pump. As the pumping efficiency of the charge-pump degrades due to the off-state of the device, a CMOS inverter is adopted to dynamically control the gate by providing a higher voltage potential from the subsequent stage in the charge-pump as a voltage supply (VDD) to the inverter.…”
Section: B Review Of Charge-pumpmentioning
confidence: 99%