2022
DOI: 10.1007/s12274-022-5288-0
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A new isotropic negative thermal expansion material of CaSnF6 with facile and low-cost synthesis

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Cited by 20 publications
(3 citation statements)
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“…These have attracted increasing attention in some fields of precision control of thermal expansion, such as optical fiber reflective grating devices and circuit boards, which could act as an additive to control the thermal expansion of matrix materials. 1 So far, NTE compounds can be roughly divided into two broad categories: one is driven by low-frequency phonons, such as oxides, 2,3 fluorides, 4,5 cyanides, 6,7 and MOFs. 8,9 Another is the class of electron-driven NTE compounds, such as BiNiO 3 , 10 BiCu 3 Fe 4 O 12 , 11 Mn 3 AN, 12 and alloys.…”
Section: Introductionmentioning
confidence: 99%
“…These have attracted increasing attention in some fields of precision control of thermal expansion, such as optical fiber reflective grating devices and circuit boards, which could act as an additive to control the thermal expansion of matrix materials. 1 So far, NTE compounds can be roughly divided into two broad categories: one is driven by low-frequency phonons, such as oxides, 2,3 fluorides, 4,5 cyanides, 6,7 and MOFs. 8,9 Another is the class of electron-driven NTE compounds, such as BiNiO 3 , 10 BiCu 3 Fe 4 O 12 , 11 Mn 3 AN, 12 and alloys.…”
Section: Introductionmentioning
confidence: 99%
“…There are also some materials, although rare, whose volume shrinks with increasing temperature, called negative thermal expansion (NTE) materials . So far, NTE has been reported in many systems such as oxides, cyanides, fluorides, MOFs, and alloys. But to reach precise volume control and avoid thermal shock, the design of zero thermal expansion (ZTE) materials is fundamental in many technological applications such as high-precision instruments and optical and electronic devices . Some ZTE mechanisms and materials were previously reported, for example, a cage-restricting model in Zn 3 GaB 6 O 12 As and Zn 4 P 6 O 12 S, a guest-molecule steric hindrance effect in TiCo­(CN) 6 ·2H 2 O, local structure distortion in (Sc,Fe)­F 3 , a low-frequency phonon compensation effect in Ta 2 Mo 2 O 11 , O atomic perturbations in Sc 1.5 Al 0.5 W 3 O 12 , spontaneous magnetic ordering related to La 0.5 Ba 0.5 CoO 3– x , and so on.…”
Section: Introductionmentioning
confidence: 99%
“…The occurrence of NTE is mainly caused by low-frequency phonon vibration, ,, ferroelectric spontaneous polarization, magnetic transitions, intermetallic charge transfer, , size effect, , and so on. The low-frequency phonon vibration mainly occurs in oxides, ReO 3 -type fluorides, organic open frameworks, , and Prussian blue analogues (PBAs). These phonon-driven NTE materials generally exhibit a large temperature range of NTE …”
Section: Introductionmentioning
confidence: 99%