A new lattice-matched In_0.17Al_0.83N ∼ GaN based heterostructure IMPATT diode for terahertz application

Abstract

Simulation studies are made on the dc and microwave performance of a novel lattice-matched In 0.17 Al 0.83 N/GaN heterostructure impact avalanche transit time (IMPATT) diode designed at the low-end terahertz frequency of 220 GHz. The electric field, breakdown voltage, rf output power and the dc-to-rf conversion efficiency of the heterostructure IMPATT diodes are compared with the GaN homostructure IMPATT diode. The results show that, a more localized avalanche region width is obtained for the heterostructure IMPATT diodes. With value of 45 nm of the In 0.17 Al 0.83 N layer width, the heterostructure IMPATT diode gives the highest efficiency (15.4%) with moderate rf output power density (1.62 MW cm −2 ), and the lowest Q-factor (6.57) as compared to other heterostructure and homostructure IMPATT diodes.

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

“…[1][2][3][4][5][6][7][8]. Some solid-state devices such as high-electron-mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), quantum cascade lasers (QCLs), impact avalanche transit time (IMPATT) diodes, resonant tunneling diodes (RTDs), etc., have shown excellent possibilities for generating and detecting THz waves in the recent past [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24]. Out of all possible solid-state THz sources, IMPATT diodes based on wide-bandgap materials such as GaN, SiC, etc., have emerged as the most powerful with regard to THz power output and DC to THz conversion efficiency [23,24].…”

Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects

“…Recently, impact ionization avalanche transit time (IMPATT) diode has attracted increasing attention, because it is one of the most powerful semiconductor nanostructures for terahertz (0.1-10 THz) application, and it can produce the highest continuous wave output power [1][2][3][4]. Among the potential materials for IMPATT diode fabrication, wide band-gap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are considered as the most promising semiconductor materials due to their excellent physical and chemical properties, including high critical field, high thermal conductivity, and high temperature operation [5][6][7].…”