A new low-loss microwave dielectric ceramic for low temperature cofired ceramic applications

Abstract

A new low sintering temperature microwave dielectric ceramic, Li2ZnTi3O8, was investigated. X-ray diffraction data show that Li2ZnTi3O8 has a cubic structure [P4332(212)] with lattice parameters a = 8.37506 Å, V = 587.44 Å3, and Z = 4 when the sintering temperature is 1050 °C. The Li2ZnTi3O8 ceramic exhibits good microwave dielectric properties with εr about 26.2, Q×f value about 62,000 GHz, and τf about −15 ppm/°C. The addition of BaCu(B2O5) can effectively lower the sintering temperature from 1050 to 900 °C without degrading the microwave dielectric properties. Compatibility with Ag electrode indicates this material can be applied to low temperature cofired ceramic devices.

Low-temperature Sintering of Bi2O3-B2O3 Glass Doped Li2ZnTi3O8 - Li2TiO3 Ceramic and Its Dielectric Properties

“…As sintering temperature increases from 810 to 900℃, the bulk density firstly increases because of the elimination of pores at the beginning of sintering, and then slightly decreases with further increase of sintering temperature, which may be attributed to the abnormal grain growth and a small amount of trapped porosity. 5,6 When the content of BBO glass increases from 0.5 to 5wt%, bulk density of the samples sintered at 840℃ decreases from 3.803 to 3.74 g/cm 3 . The dependency of dielectric constant on sintering temperature presents the same trend as that of bulk density, since a high bulk density means a high relative permittivity owing to lower porosity.…”

“…[1][2][3][4] Silver is a widely used metallic electrode in LTCC technology due to its high conductivity and relatively low cost. However, the melting temperature of Ag is low (about 961℃), and it is necessary to search potential ceramics with low sintering temperature that can be co-fired with Ag.…”

Effects of Zr substitution on the microstructure and microwave dielectric properties of Li2Zn(Ti1−xZrx)3O8 ceramics

“…Thriving developments in wireless and mobile communication systems have demanded for microwave components with excellent dielectric properties, such as high relative permittivity (e r ) to reduce the size of microwave devices, high quality factor (Q) to minimize dielectric loss and near zero temperature coefficient of resonant frequency (s f ) to ensure the stability of the frequency against temperature changes [1,2].…”

A novel low-firing microwave dielectric ceramic NaMg4V3O12 and its chemical compatibility with silver electrode

“…The low sintering temperatures of these materials mainly originate from the low low-melting constituents, such as V 2 O 5 [9,10], TeO 2 [11,12], Bi 2 O 3 [13,14], Li 2 O [15,16], WO 3 [17,18], etc. In our previous work, the microwave dielectric properties of several garnet vanadates with a general formula A 3 B 2 V 3 O 12 , such as NaCa 2 Mg 2 V 3 O 12 [19], LiCa 3 MgV 3 O 12 [9], and Li 1+2x Mg 4-2x V 3 O 12 [20], were characterized.…”