A new luminescent defect state in low temperature grown amorphous SiN<sub>x</sub>O<sub>y</sub> thin films

Dong, Hengping; Chen, Kunji; Wang, Danqing; Li, Wei; Ma, Zhongyuan; Xu, Jun; Huang, Xinfan

doi:10.1002/pssc.200982770

Cited by 11 publications

(10 citation statements)

References 18 publications

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“…In our previous work, a room temperature tunable light emission ranged from red to blue has been observed; 10,11 consequently, the electroluminescence (EL) from our aSiN x O y films has been also demonstrated. 12 Moreover, the behavior of optical gain from a-SiN x O y waveguide structures has been investigated.…”

mentioning

confidence: 88%

The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

Zhang

Chen

Lin

et al. 2015

Applied Physics Letters

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Last year, we have reported that the internal quantum efficiency of photoluminescence (PL) from amorphous silicon oxynitride (a-SiNxOy) films has been achieved as high as 60%. The present work intensively investigated the mechanisms for tunable PL in the 2.05–2.95 eV range from our a-SiNx:O films, by using a combination of optical characterizations, X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) measurements. The results of XPS, EPR, and photoluminescence excited measurements indicated that the incorporation of oxygen atoms into silicon nitride (a-SiNx) networks not only reduced the band tail structure disorder (Urbach tail width EU) but also created N-Si-O (Nx) defect states in the band gap. We have discovered the distinctive PL characteristics from a-SiNx:O films with various NH3/SiH4 ratios. The PL peak energy (EPL) is independent of the excitation energy (Eexc) and the PL intensity (IPL) is regardless of the optical band gap (Eopt) but is proportional to the Nx defects concentration, both of which are completely different from the PL characteristics by band tail states recombination mechanism, in which the EPL is proportional to Eexc (when Eexc ≤ Eopt) and the IPL is dependent on the relative position of Eexc and Eopt. Based on the N-Si-O bonding configurations and the distinctive PL characteristics, the radiative recombination mechanism through the N-Si-O defect states has been proposed, by which the performance of stimulated emission may be realized in this kind of a-SiNx:O films.

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confidence: 88%

The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

Zhang

Chen

Lin

et al. 2015

Applied Physics Letters

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“…At that time, it was suggested that the light emission was due to the radiative recombination through the luminescent center related to Si-O bonds in the Si-N matrix. Based on above investigations, Dong et al [46] further characterized the luminescent defect states. The results from measurements of FTIR and XPS verified the existence of O-Si-N bonding configuration, which acted as a new luminescent defect state in our a-SiN x O y films.…”

Section: Pl Properties and Recombination Mechanisms In A-sio X N Y Filmsmentioning

confidence: 99%

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

et al. 2019

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Silicon oxynitride films are one kind of important gate dielectric materials for applications in the fabrication of silicon CMOS integrated circuits (ICs), which have been widely and deeply studied. However, with the significant demand of the technologies for Si-based monolithic optoelectronic ICs, the research efforts on the optoelectronic applications of these materials have been continually increasing, particularly in the study of light emission properties and recombination mechanisms. In this paper, we first briefly outline the present photoluminescence (PL) mechanisms in amorphous silicon oxynitride (a-SiO x N y) films. Since, the PL properties and recombination processes are affected by both structural disorder and chemical disorder, the PL mechanism has been still unclear and even controversial until now. Among these various PL recombination models, the band tail states and defect state models have gained general consensus. Recently, a N-Si-O bond defect model has been reported, which depends on relative atom concentration of oxygen and nitrogen in the silicon oxynitride materials. It has been revealed that oxygen bonding plays a key role, not only in reducing the structural disorder, but also in creating N-Si-O (N x) defect states in the band gap. The characteristics of two models, namely band tail and N-Si-O bond defects, have been discussed in detail. Finally, it has been shown that by controlling the chemical composition of these non-stoichiometric silicon oxynitride materials, the optical and electronic properties can be improved. Keywords: amorphous silicon oxynitride (a-SiN x O y), PL mechanism, band tail model, N-Si-O bond defect model, a-SiN x O y LED

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“…[9]. [14]. Note that the spectral coincidence of the emission band and the defects absorption band indicates that radiative emission in a-SiN x O y films occurs through the radiative states associated with the O-Si-N bonds.…”

Section: Methodsmentioning

confidence: 94%

“…The details of sample preparation have been reported in Ref. [14]. For preparing the strip-loaded waveguide, the standard SiO 2 film with a thickness of 1.0 µm was grown on the a-SiN x O y film by using PECVD with SiH 4 /N 2 O fluence ratio of 0.025 for 80 min.…”

Section: Methodsmentioning

confidence: 99%

Optical gain from luminescent a-SiN<inf>x</inf>O<inf>y</inf> waveguide

Chen

Dong

Wang

et al. 2010

7th IEEE International Conference on Group IV Photonics

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A new luminescent defect state in low temperature grown amorphous SiN_xO_y thin films

Cited by 11 publications

References 18 publications

The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Optical gain from luminescent a-SiN<inf>x</inf>O<inf>y</inf> waveguide

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A new luminescent defect state in low temperature grown amorphous SiNxOy thin films

Cited by 11 publications

References 18 publications

The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Optical gain from luminescent a-SiN<inf>x</inf>O<inf>y</inf> waveguide

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A new luminescent defect state in low temperature grown amorphous SiN_xO_y thin films