A New Method for Extracting Base Resistance in Bipolar Transistors

Cai, Will; Loechelt, G. H.; Shastri, S.

doi:10.1109/ted.2005.844789

Cited by 5 publications

(5 citation statements)

References 9 publications

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“…For parameter extraction, we need to explicitly write ܸ ଵଶ as a function of ‫ܫ‬ , which is not readily available from [4]. In the Mextram extraction guide, the second term in [4] containing ಳ ೂ ಳభಳమ ଷோ is neglected to simplify the calculation and giving the value of ܸ ଵଶ as…”

Section: Model Formulationmentioning

confidence: 99%

“…In order to show the difference in results with and without using Mextram's approximation as given by [5], and for further verification of the method, the extracted parameters were compared with base and emitter parasitic resistances extracted using sparameter data as described in (4). The method yields the base and emitter resistances as figure 7, where ݃ and ߚ can be calculated using the DC bias values.…”

Section: Ecs Transactions 33 (6) 337-348 (2010)mentioning

confidence: 99%

“…where, ܸ ் denotes the thermal voltage. For parameter extraction, we need to explicitly write ܸ ଵଶ as a function of ‫ܫ‬ , which is not readily available from [4]. In the Mextram extraction guide, the second term in [4] containing…”

Section: Solution Formentioning

confidence: 99%

“…However, as one can see, the value of the base resistance using Mextram's approximation in [5] is under-estimated. The reason is because the contribution of the ܸ ଵଶ term in [4] is neglected in Mextram's approximation.…”

Section: Ecs Transactions 33 (6) 337-348 (2010)mentioning

confidence: 99%

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Direct Parameter Extraction Of Base and Emitter Resistances For SiGe HBTs Using DC Data Only

Mudholkar¹,

Mantooth²,

Niu³

et al. 2010

ECS Trans.

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A new method to directly extract base and emitter resistance parameters for SiGe HBTs using the Mextram bipolar compact transistor model has been presented. The method only requires a standard forward Gummel measurement and accounts for several second order effects like high-injection base conductivity modulation, Early effect and emitter current crowding. Base and emitter resistance parameters have been extracted over a wide temperature range (300K -93K) for a first generation 0.5μm SiGe HBT with a peak cut-off frequency of 50 GHz at 300K. The HBT features a heavily doped poly-silicon emitter, an extrinsic base region doped well above the Mott's transition (͵ ൈ ͳͲ ଵ଼ cm -3 for boron in silicon) and an intrinsic base region doped very close to the Mott's transition. The extracted parameters have been verified by comparison with several different methods. IntroductionParasitic base and emitter series resistances are very important parameters for bipolar transistors, and their measurement is difficult because of several second order effects taking place in the base like conductivity modulation and high injection. Accurate base and resistance parameters are needed by various bipolar compact models like Mextram (1) and VBIC (2) to predict the different transistor characteristics accurately. In most of the compact models, the series resistances are distributed into an emitter resistance ‫,)ܧܴ(‬ an extrinsic base resistance ‫)ܥܤܴ(‬ and a bias-dependent intrinsic base resistance ‫,)ܸܤܴ(‬ as shown in figure 1.Various methods have been proposed to extract the base and emitter resistances of bipolar transistors, and they can be classified based on measurement techniques: noise, AC and DC. Methods based on noise (3) and AC (4)-(5) data can yield fairly accurate values of the resistances, but they require expensive characterization equipment, are sensitive to the accuracy of the measured data, and are often very time consuming. DC methods are generally preferred, because they are straightforward and easier to execute.Several DC methods have been proposed based on the dual-base test structures (6)-(8) which provide a means of accurate extraction of base and emitter resistance values A popular method to extract the emitter resistance is the open-collector method (9). In this method, the collector-emitter voltage versus emitter current is measured, while driving the transistor in saturation. The slope of the ܸ ா െ ‫ܫ‬ ா curve gives the emitter resistance ‫.ܧܴ‬ However, the method does not account for high level injection effects, and the slope of the ܸ ா െ ‫ܫ‬ ா characteristics is bias-dependent as reported in (10). As a result, the extracted emitter resistance is often over-estimated. The classical Ning-Tang method (10) is based on relating the deviation of base current from its ideal exponential value at higher base-emitter biases in the forward Gummel setup. However, it does not account for emitter current crowding and a prior knowledge of pinched base sheet resistance is needed in order to separate the extracted emitter and...

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Section: Model Formulationmentioning

confidence: 99%

Section: Ecs Transactions 33 (6) 337-348 (2010)mentioning

confidence: 99%

Section: Solution Formentioning

confidence: 99%

Section: Ecs Transactions 33 (6) 337-348 (2010)mentioning

confidence: 99%

See 2 more Smart Citations

Direct Parameter Extraction Of Base and Emitter Resistances For SiGe HBTs Using DC Data Only

Mudholkar¹,

Mantooth²,

Niu³

et al. 2010

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…The R B -V CB curve computed by setting M = 1 in (7), and thus in(11),(12), is not expected to coincide with the one evaluated by taking into account II for V CB < V CBZ ; in this case M(V CBZ ) in the V BEjZ expression (12) is indeed equal to 1.00132.…”

mentioning

confidence: 91%

Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

d’Alessandro

Sasso

Rinaldi

et al. 2016

IEEE Trans. Electron Devices

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This paper presents an improved variant of a dc method to experimentally evaluate the base resistance of a bipolar transistor. The technique relies on a device model associated with a simple parameter optimization methodology, and is suited for modern technologies wherein self-heating and impact-ionization effects play a relevant role. The approach is successfully applied to state-of-the-art SiGe:C heterojunction bipolar transistors for high-frequency applications, although it can in principle be exploited for any bipolar device. The accuracy of the method is verified by numerical and experimental procedures.

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A Novel Base Resistance Model Incorporating Base Distributive Effects Along with Emitter Length

Li,

Metzger,

Cismaru

et al. 2023

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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A New Method for Extracting Base Resistance in Bipolar Transistors

Cited by 5 publications

References 9 publications

Direct Parameter Extraction Of Base and Emitter Resistances For SiGe HBTs Using DC Data Only

Direct Parameter Extraction Of Base and Emitter Resistances For SiGe HBTs Using DC Data Only

Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

A Novel Base Resistance Model Incorporating Base Distributive Effects Along with Emitter Length

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