A New Method to Evaluate the Degree of Potential Fluctuation in InGaN Quantum-Well Laser Diodes by Optical-Pump Stimulated-Emission Measurements

Oshima, Itsuki; Ikeda, Yoshikazu; Sakai, Shigeta; Yamaguchi, Atsushi; Kanitani, Yuya; Tomiya, Shigetaka

doi:10.1109/islc.2018.8516240

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2021

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“…In addition, optical-pump stimulatedemission measurements have been performed for an epi-layer sample with an InGaN-QW laser diode structure, and the theoretically predicted phenomena have been observed in the measurements. Some of the results in this study have already been presented in a conference abstract, 24) but the results and discussions are described in greater detail in this regular paper.…”

Section: Introductionmentioning

confidence: 92%

Impact of potential fluctuation on temperature dependence of optical gain characteristics in InGaN quantum-well laser diodes

Oshima¹,

Ikeda²,

Sakai³

et al. 2021

Jpn. J. Appl. Phys.

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The effects of the potential fluctuation (alloy compositional fluctuation and/or well-width fluctuation) in InGaN quantum wells (QWs) on the characteristics of InGaN-QW lasers, have been theoretically investigated, and it is found that the temperature dependence of the lasing threshold is strongly affected by the degree of fluctuation. Furthermore, we have experimentally measured the temperature dependence of stimulated-emission threshold excitation power density in photo-pump measurements, and have observed the predicted behavior of temperature dependence. It is considered that the temperature dependence of the lasing threshold could be used for the evaluation of the degree of the potential fluctuation in active layers of InGaN QW lasers.

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Section: Introductionmentioning

confidence: 92%