2013
DOI: 10.1080/10916466.2011.561263
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A New Method to Prevent Stealing Gas in a Natural Gas Supply System

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Cited by 2 publications
(3 citation statements)
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“…It can be found that the compressive strength of C/SiC – Ti 3 SiC 2 is higher than twice of that of C/SiC. In the compression testing, the damage process of C/SiC included three stages: the first stage was the elastic shortening; the second stage was the ply delamination, bundle separation, and transverse bundle shear cracking; the third stage was the failure of composites by kinking, bending fracture, and shear fracture of fiber bundles . As shown in the fracture surface (Figure b), all the fibers were sheared directly in the compression testing, revealing that the fibers cannot play any loading performance, so it can be concluded that the compressive strength of both two composites depends on the matrix strength.…”
Section: Resultsmentioning
confidence: 99%
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“…It can be found that the compressive strength of C/SiC – Ti 3 SiC 2 is higher than twice of that of C/SiC. In the compression testing, the damage process of C/SiC included three stages: the first stage was the elastic shortening; the second stage was the ply delamination, bundle separation, and transverse bundle shear cracking; the third stage was the failure of composites by kinking, bending fracture, and shear fracture of fiber bundles . As shown in the fracture surface (Figure b), all the fibers were sheared directly in the compression testing, revealing that the fibers cannot play any loading performance, so it can be concluded that the compressive strength of both two composites depends on the matrix strength.…”
Section: Resultsmentioning
confidence: 99%
“…The electrical resistivity of carbon fiber, Ti 3 SiC 2 , and TiSi 2 are 2 × 10 −5 , 13–16 × 10 −8 , and 22 × 10 −8 Ω m, all of which are electrical conductivity phase. While the electrical resistivity of SiC fabricated by CVI is 2.47 × 10 3 Ω m, which is semiconductor with low electrical conductivity. So it is reasonable that C/SiC – Ti 3 SiC 2 shows higher electrical conductivity than C/SiC.…”
Section: Resultsmentioning
confidence: 99%
“…As an important member of multidentate O‐donor ligands, 1, 4‐naphthalenedicarboxylic acid (1, 4‐H 2 ndc) seems to be an excellent building block with charge, versatile coordination modes as well as remarkable stability for constructing multidimensional networks 1517. The combination with neutral N‐donor ligands and anionic O‐donor ligands can generate more robust network structures, which cannot be obtained only via one type of ligands 18,19…”
Section: Introductionmentioning
confidence: 99%