A new Multi-Harmonic Volterra model dedicated to GaN packaged transistor or SSPA for pulse application

Demenitroux, Wilfried; Mazière, C.; Gatard, Emmanuel; Dellier, S.; Saboureau, C.; Campovecchio, Michel; Quéré, Raymond

doi:10.1109/mwsym.2011.5972829

Cited by 2 publications

(1 citation statement)

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“…Modeling the short‐ and long‐term memory effects of PAs play a big role in the design of wireless systems . The work in presents the modeling technique used for RF circuit with short‐term memory effects.…”

Section: Introductionmentioning

confidence: 99%

Recurrent neural network technique for behavioral modeling of power amplifier with memory effects

Yan

Chuan

Zhang

2014

Int J RF and Microwave Comp Aid Eng

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A new technique for behavioral modeling of power amplifier (PA) with short‐ and long‐term memory effects is presented here using recurrent neural networks (RNNs). RNN can be trained directly with only the input–output data without having to know the internal details of the circuit. The trained models can reflect the behavior of nonlinear circuits. In our proposed technique, we extract slow‐changing signals from the inputs and outputs of the PA and use these signals as extra inputs of RNN model to effectively represent long‐term memory effects. The methodology using the proposed RNN for modeling short‐term and long‐term memory effects is discussed. Examples of behavioral modeling of PAs with short‐ and long‐term memory using both the existing dynamic neural networks and the proposed RNNs techniques are shown. © 2014 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:289–298, 2015.

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Section: Introductionmentioning

confidence: 99%