A New Noise Parameter Model of Short-Channel MOSFETs

Jeon, Jongwook; Song, Ickhyun; Kang, In Man; Yun, Yeonam; Park, Byung‐Gook; Lee, Jong Duk; Shin, Hyungcheol

doi:10.1109/rfic.2007.380964

Cited by 11 publications

(9 citation statements)

References 2 publications

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“…The channel thermal noise is the most dominant noise source of the MOSFETs at highfrequency [4][5][6][7]. As the gate length scales down to nanoscale era the channel thermal noise becomes larger [4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…It is 1 at V DS = 0 V and it converges into 2/3 at the saturation bias region. It has been widely known that the long-channel thermal noise model severely underestimates the shortchannel thermal noise due to short channel effects such as channel length modulation (CLM), velocity saturation effect (VSE), and carrier heating effect (CHE) [3][4][5][6][7][8][9][10]12]. As the channel length shrinks down to the nanoscale, these short-channel effects become more prominent in noise behaviors [13].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of Thermal Noise Factor in Nanoscale MOSFETs

Jeon¹,

Park²,

Shin³

2010

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, we investigate the channel thermal noise in nanoscale MOSFETs. Simple analytical model of thermal noise factor in nanoscale MOSFETs is presented and it is verified with accurately measured noise data. The noise factor is expressed in terms of the channel conductance and the electric field in the gradual channel region. The proposed noise model can predict the channel thermal noise behavior in all operating bias regions from the long-channel to nanoscale MOSFETs. From the measurement results, we observed that the thermal noise model for the long-channel MOSFETs does not always underestimate the short-channel thermal noise.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of Thermal Noise Factor in Nanoscale MOSFETs

Jeon¹,

Park²,

Shin³

2010

JSTS:Journal of Semiconductor Technology and Science

Self Cite

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“…For short channel devices, values of observed channel noise were higher than predicted by the Van der Ziel model [4][5][6]. Several models of channel thermal noise of short channel MOSFET devices operating at radio frequencies have been proposed recently [4] and [7]. At RF frequencies, the channel thermal noise causes an induced gate noise current to flow.…”

Section: Introductionmentioning

confidence: 99%

“…At RF frequencies, the channel thermal noise causes an induced gate noise current to flow. However, for short channel MOSFETS, the induced gate noise can still be ignored compared to the channel thermal noise in hand calculations [7]. The channel thermal noise models compared in this paper are used for circuit analysis.…”

Section: Introductionmentioning

confidence: 99%

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High frequency channel noise measurement and characterization in deep submicron MOSFETs

Allam

Filanovsky

2010

Analog Integr Circ Sig Process

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We evaluate and compare several closed form expressions of channel thermal noise used in circuits with MOSFET devices operating at high frequencies. To verify and compare these models, NMOS devices with channel widths of 120 lm (20 lm * 6 fingers) and channel lengths of 0.18, 0.36, and 0.54 lm were tested. A comparison of extracted and calculated noise data indicates that a model based on drain and overdrive voltages of short channel devices operating at RF frequencies provides the best match between extracted and calculated results for the channel thermal noise over a frequency range of 3 to 6 GHz and a gate overdrive voltage range of 0.2 to 1.2 V.

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Symbolic noise modeling, analysis and optimization of a CMOS input buffer

Patnaik

Banerjee

2011

Analog Integr Circ Sig Process

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This paper presents the symbolic noise modeling, analysis and optimization of an Input Buffer designed using RFCMOS technology, intended to be used in a high speed Track and Hold Amplifier (THA). The symbolic noise modeling and analysis are carried out by modeling each RF-MOSFET present in the Input Buffer by its nullor equivalent noise model. This helps in better understanding the noise involvement with the circuit and its optimization. All the extrinsic and intrinsic components associated with the RF-MOSFET used for the symbolic noise analysis are obtained using parameter extraction technique. The parameter extraction and symbolic noise analysis are done using MATLAB. The results obtained through MATLAB simulation are in good agreement with the results obtained from SPICE.

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A New Noise Parameter Model of Short-Channel MOSFETs

Cited by 11 publications

References 2 publications

Investigation of Thermal Noise Factor in Nanoscale MOSFETs

Investigation of Thermal Noise Factor in Nanoscale MOSFETs

High frequency channel noise measurement and characterization in deep submicron MOSFETs

Symbolic noise modeling, analysis and optimization of a CMOS input buffer

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