2020
DOI: 10.1002/adom.202001856
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A New Nonlinear Optical Selenide Crystal AgLiGa2Se4 with Good Comprehensive Performance in Mid‐Infrared Region

Abstract: Mid‐infrared (mid‐IR) nonlinear optical (NLO) crystals are indispensable for the mid‐IR lasers generation with tunable wavelengths from 3 to 20 µm. AgGaSe2 is a commercial mid‐IR NLO crystal with the highest figures of merit, but suffers low laser damage threshold (LDT). To achieve the balance of optical transmission, NLO effect, and LDT, it is proposed to molecularly modify the AgGaSe2 structure by introducing the [LiSe4] tetrahedra, and successfully grow large crystals of a new selenide AgLiGa2Se4. The repla… Show more

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Cited by 32 publications
(27 citation statements)
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“…Owing to the extremely rich structure types and amazing performances, chalcogenide has become one preferred system to explore mid‐IR NLO materials. [ 19–21 ] Accordingly, a batch of chalcogenides such as LiMQ 2 (M = Ga, In, Q = S, Se), [ 22–24 ] BaM 4 Q 7 (M = Al, Ga, Q = S, Se), [ 25–28 ] Li 2 In 2 MQ 6 (M = Si, Ge; Q = S, Se), [ 29 ] BaGa 2 MQ 6 (M = Si, Ge; Q = S, Se), [ 30 ] AXHg 3 P 2 S 8 (A = Rb, Cs; X = Cl, Br), [ 31 ] AgLiGa 2 Se 4 , [ 32 ] Na 2 ZnGe 2 S 6 , [ 33 ] CuZnPS 4 , [ 34 ] and CuCd 3 PS 6 [ 35 ] have been reported and exhibited good NLO properties in some specific aspects such as bandgap and/or SHG response. This stimulates us to continue to search for promising sulfides/selenides for mid‐IR NLO applications.…”
Section: Introductionmentioning
confidence: 99%
“…Owing to the extremely rich structure types and amazing performances, chalcogenide has become one preferred system to explore mid‐IR NLO materials. [ 19–21 ] Accordingly, a batch of chalcogenides such as LiMQ 2 (M = Ga, In, Q = S, Se), [ 22–24 ] BaM 4 Q 7 (M = Al, Ga, Q = S, Se), [ 25–28 ] Li 2 In 2 MQ 6 (M = Si, Ge; Q = S, Se), [ 29 ] BaGa 2 MQ 6 (M = Si, Ge; Q = S, Se), [ 30 ] AXHg 3 P 2 S 8 (A = Rb, Cs; X = Cl, Br), [ 31 ] AgLiGa 2 Se 4 , [ 32 ] Na 2 ZnGe 2 S 6 , [ 33 ] CuZnPS 4 , [ 34 ] and CuCd 3 PS 6 [ 35 ] have been reported and exhibited good NLO properties in some specific aspects such as bandgap and/or SHG response. This stimulates us to continue to search for promising sulfides/selenides for mid‐IR NLO applications.…”
Section: Introductionmentioning
confidence: 99%
“…[ 6 ] Among them, selenides normally exhibit wider IR transparent regions, larger SHG responses, and lower melting points, but smaller band gaps than sulfides. [ 7 ] Over the past decades, a plenty of selenides with good NLO properties like LiGaSe 2 , [ 8 ] α ‐BaGa 4 Se 7 , [ 9 ] β ‐BaGa 4 Se 7 , [ 10 ] β ‐BaGa 2 Se 4 , [ 11 ] Li 2 ZnMSe 4 (M = Ge, Sn), [ 12 ] Li 2 CdMSe 4 (M = Ge, Sn), [ 13 ] Li 2 In 2 MSe 6 (M = Si, Ge), [ 14 ] Na 4 MgM 2 Se 6 (M = Si, Ge), [ 15 ] BaGa 2 MSe 6 (M = Si, Ge), [ 16 ] γ ‐NaAsSe 2 , [ 17 ] Na 6 MSe 4 (M = Zn, Cd), [ 18 ] CsM 3 Se 6 (M = Ga/Sn, In/Sn), [ 19 ] and AgLiGa 2 Se 4 [ 20 ] have been designed and synthesized successfully. However, to enhance the LIDT, the band gaps in selenides are still highly expected to be further improved.…”
Section: Introductionmentioning
confidence: 99%
“…For example, AGS and AGSe show low laser-induced damage thresholds (LIDTs), induced by small band gaps, in which a high-power laser output in mid-IR and far-IR regions is difficult to realize, and ZGP cannot be used for the high-efficiency mid-IR laser pumped by mature 1 μm laser sources due to the strong multi-photon absorption at ∼1 μm in the compound. To obtain a high-efficiency laser output, a large NLO coefficient (>1 × AGS) is expected in the applied NLO material, and for a high-power laser, a large LIDT (>1 × AGS) , is essential, which is usually related to a wide band gap. What is more, for practical applications, stable physicochemical properties and good crystal growth habits to obtain large-scale single crystals are also expected. Therefore, the exploration of new IR NLO materials with a strong SHG response, high LIDT, and excellent overall properties is an urgent need but challenging. …”
Section: Introductionmentioning
confidence: 99%