A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices

Adaptive Finite Volume Simulation of Electrical Characteristics of Organic Light Emitting Diodes

“…This simulation methodology has been developed in our recent work for semiconductor device simulation [7], [8], [9], [10]. Each Gummel decoupled PDE is approximated with the FV method over unstructured meshes.…”

“…In this paper a set of drift-diffusion (DD) equations is solved with an adaptive computing technique [7], [8], [9], [10] for a two-dimensional (2D) simulation of OLEDs. For the simulation of OLEDs, the DD equations consist of the Poisson equation, the current continuity equation of electron, the current continuity equation of hole, and models of interface traps.…”

A quantum corrected energy-transport model for nanoscale semiconductor devices

“…The DGET model is of parabolic type so that its numerical solution needs less effort than QHD models which contain hyperbolic modes. Moreover, our model is completely self-adjoint for all state variables and hence provides many appealing mathematical features such as global convergence, fast iterative solution, and highly parallelizable as demonstrated in our previous papers [11,12,24]. The global convergence is a consequence of monotone iterative methods used in solving the discrete systems of nonlinear algebraic equations resulting from adaptive finite element approximation of the model.…”

Statistical device simulation of intrinsic parameter fluctuation in 16-nm-gate n- and p-type Bulk FinFETs

“…In this work, we investigate the characteristic fluctuations include the RDF, ITF and WKF between n-and p-type 16-nm-gate HKMG bulk FinFETs with the aspect ratio equaling to 2 (the aspect ratio, AR, is equal to the fin height / fin width) using experimentally validated 3D quantum-mechanically corrected device simulation [15][16][17][18]. For the channel length scaling down, the electric line due to drain voltage will penetrate to source easier and decrease the barrier for electrons that increase the leakage current.…”