A New Physical $\hbox{1}/f$ Noise Model for Double-Stack High-$k$ Gate-Dielectric MOSFETs

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

“…The sub-threshold swing at 300 K is approximately 70 mV/decade to 110 mV/decade. [19] As shown in Fig. 5 at 10 K, the sub-threshold swing is reduced almost 3.3 times, which means a smaller power supply can be utilized.…”

“…[18] Previous work was always concentrated in the area of cryogenic I-V performance of SOI MOS. [19][20][21] In this work, the experimental results of cryogenic I-V and C-V performance of SOI MOSFETs with a radiation-hard architecture in a 0.18-µm process are presented. Some specific behaviors at cryogenic temperature are analyzed.…”

Statistical characterization and reliability modeling of novel high-K gate dielectric stacks

“…Here, I g would involve many independent uncorrelated trap-assisted-tunneling (TAT) events. Depending on the vertical location (z) of the trap with reference to the substrate, the time constant (τ) for the carrier trapping/detrapping would be given by the Wentzel-Kramers-Brillouin (WKB) approximation [196,200], which for a dual-layer gate stack can be expressed as in Eqn. (3.5) [201], with the electron tunneling coefficient γ = 4π/h•√(2m * Ф).…”

“…Since some of the tunneling events to traps deep in the HK (traps situated more than 2-3 nm deep in the 4.4 nm HK layer) correspond to τ > 10ms (as computed using the MSUN model in Fig 3.11 above), which matches with the time resolution of the parameter analyzer, the RTN signal of these trapping events in the bulk HK can be clearly detected and would have a 1/f 2 Lorentzian component at low frequencies in the frequency domain. Only traps situated very close to the HK-IL interface, with τ ~ 0.1-1µs [200], may appear noisy (fast trapping/detrapping) due to resolution limitations of the measurement system, thus showing 1/f trends at the highest detectable frequencies corresponding to τ ~ 10ms. It is worth noting that the noise from these percolated traps (S perc (f)) exceeds the noise from non-percolative traps (S non-perc (f)) by many orders (Eqn.…”