A new physics-based model for time-dependent-dielectric-breakdown

Schlund, B.; Messick, C.; Suehle, J.S.; Chaparala, P.

doi:10.1109/irws.1995.493579

Cited by 7 publications

(3 citation statements)

References 13 publications

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“…Both mechanisms could be related to carrier injection in the oxide. Principal phenomena causing carrier injection [22,23] are: injection by tunnel effect, Fowler-Nordheim injection and hot carrier injection.…”

Section: Analysis Of Sic Mosfet Robustness In Chopper Modementioning

confidence: 99%

SiC MOSFETs robustness for diode-less applications

et al. 2018

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Silicon-Carbide (SiC) technology presents several advantages over silicon for power electronics applications, such as lower losses. However, SiC technology is not totally mature, and some reliability problems remain. This paper studies the robustness of SiC MOSFETs in the case of diode-less applications and the associated phenomena, such as gate oxide degradation. Several devices were stressed under conditions of inductive switching and inverse current conduction. These devices were periodically characterised. As a result, a threshold voltage shift was observed in the MOSFET, with a dependence on the duty cycle of the transistor. On the contrary, no significant degradation of the internal P-N junction of the transistor was observed.

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Section: Analysis Of Sic Mosfet Robustness In Chopper Modementioning

confidence: 99%

SiC MOSFETs robustness for diode-less applications

et al. 2018

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“…The system will make available these N, bonds for thermal breakage, where Nj = Mj -Mj( A) (A.1) and where M,(A) would represent the number of distorted (but not broken) bonds still existing when the system finally comes into new equilibrium. The rate that the system comes into new equilibrium, of course, depends exponentially on the activation energy, (AH,), -aj E, [equation (24) in the text], through the rate constant [equation (27)]. …”

Section: Appendixmentioning

confidence: 99%

Disturbed bonding states in SiO/sub 2/ thin-films and their impact on time-dependent dielectric breakdown

McPherson

Mogul

1998

1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98

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A temperature-independent field acceleration parameter y and a field-independent activation energy AH0 can result when different types of disturbed bonding states are mixed during time-dependent dielectric breakdown (TDDB) testing of Si02 thin films. While y for each defect type alone has the expected 1/T dependence and AH0 shows a linear decrease with electric field, a nearly temperature-independent y and a field-independent AH0 can result when two or more disturbed bonding states are mixed. These observations suggest strongly that the oxygen vacancy is an important intrinsic defect for breakdown and that field, not current, is the cause of TDDB under low-field conditions.

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“…At present, the reliability problems that have great influence on CMOS devices include negative-bias temperature instability (NBTI) [5], electromigration (EM) [6], time-dependent gate oxide breakdown (TDDB) [7] and hot carrier injection (HCI) [8]. This paper first briefly introduces these four kinds of reliability problems, and then analyzes the causes of the reliability problems.…”

Section: Introductionmentioning

confidence: 99%

Research on reliability of complementary metal oxide semiconductor integrated circuit

2023

ACE

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Complementary metal oxide semiconductor (CMOS) devices are an important part of integrated circuit (IC), but in the application process, it has many reliability problems, such as negative-bias temperature instability (NBTI), electromigration (EM), time-dependent gate oxide breakdown (TDDB), hot carrier injection (HCI), etc. These reliability problems can affect the threshold voltage and mobility of the device. In order to improve the reliability of integrated circuits, these reliability problems are systematically studied in this paper.

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A new physics-based model for time-dependent-dielectric-breakdown

Cited by 7 publications

References 13 publications

SiC MOSFETs robustness for diode-less applications

SiC MOSFETs robustness for diode-less applications

Disturbed bonding states in SiO/sub 2/ thin-films and their impact on time-dependent dielectric breakdown

Research on reliability of complementary metal oxide semiconductor integrated circuit

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