A New Preparation Process of Double-gate FETs Based on Monolayer Graphene Nanoflakes

Abstract

Abstract:A new preparation process to product double-gate field effect transistor (DG-FET) of monolayer graphene nanoflakes, fabricated by mechanical exfoliation, was systematically studied in this paper. The graphene DG-FETs are bipolar and possess high gate modulation (On/Off ratio is large), and higher regulation accuracy, which is double-gate regulation. These results showed the extraordinary performance of the double-gate FETs based on monolayer graphene, which might open a new road to develop graphene-based material in the application of double-gate FETs. IntroductionSince graphene has been discovered by Geim and Novoselov in 2004[1], this two-dimensional (2D) material with typically extraordinary properties has attracted extensive research in the last few years [2][3][4][5]. Disappointingly, low On/Off ratio and low regulation accuracy has immensely restricted the application of this star material in logic transistor field and optoelectronics [6,7]. Fortunately, DG-FET is an effective way to solve the problem, which has extraordinary properties. So it is necessary to expand a better path to produce the DG-FET.Although the concept of DG-FET has been put forward for a long time [9][10][11][12][13][14][15][16], few researchers can stably produce DG-FET. Therefore, a new preparation process of DG-FET based on monolayer graphene is systematically put forward in this paper, which exhibits extraordinary properties [16][17][18][19][20].Results indicate that the graphene DG-FET, fabricated by the new way, has a larger On/Off ratio and higher regulation accuracy, compared to traditional graphene FETs and graphene DG-FETs are produced by other way. More importantly, we open up a new road to produce monolayer graphene DG-FET stably and normatively. Accordingly, this graphene DG-FET may possibly be more promising in the application of FETs.