A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues

Using the charge pumping geometric component to extract NBTI induced mobility degradation

“…This means that I Geo increases during the stress. The same behavior (increasing of the geometric component during the stress) was previously observed for MOSFET devices of 1 m technology [6]. The increasing of I Geo is due to the degradation of carrier mobility which is caused by the coulomb scattering from traps charge generated during the stress.…”

“…is the exponential decay constant associated with the influence of the electric field and the thermal diffusion [6].W is the gate width, q is the electron charge and f is the gate signal frequency.…”

“…The relation connecting the interface trap (N it ) and the empirical parameters is given by equation (10) in [6]. Therefore, the interface trap induced by the stress ( N it ) can be extracted by: (13) where ( 0 , 0 ) and ( , ) are the fitting parameters of CP data before and after stress using (10).…”

“…In addition, using a long gate signal time fall (rise) limits the traps energy interval within the band gap that could be probed. Moreover, I Geo could appear in degraded transistors, even if it is negligible in fresh devices, since it can be increased by the stress induced traps due to the Coulomb scattering of the trap charge [6][7].…”

Investigating the NBTI effect on P- and N-substrate MOS capacitors and p-MOSFET transistors

“…It has been reported that the effective channel length effect on NBTI degradation has an important role [4][5][6][7][8]. It is generally observed that threshold voltage shift (LI V,h) caused by NBTI stress is enhanced by reduction of the channel length [4][5][6], indicating a spatially nonuniform degradation along the channel.…”