A new relationship between the Fukui coefficient and optimal current value for low-noise operation of field-effect transistors

Delagebeaudeuf, D.; Chevrier, J.; Laviron, M.; Delescluse, P.

doi:10.1109/edl.1985.26186

Cited by 27 publications

(6 citation statements)

References 2 publications

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“…The modeled results include our modified model Eqn. (8) and that by V. Guru et al in [9]. The latter has not taken the C gd into consideration, so its modeled results of NF min , R opt are not matching the extracted data very well, similar to the case of intrinsic circuit (Fig.…”

Section: Analytical Modeling and Discussionmentioning

confidence: 87%

“…where the coefficient K f is a semi-empirical parameter, and this model's validity depends on the assumption that the induced gate noise and the quadratic term for the frequency is negligible and the correlation coefficient between gate and drain noise is unity [8], so it is not suitable for our GaN HEMT since our induced gate noise and correlation coefficient do not agree on the above assumption (See the values of R and C in Fig. 4).…”

Section: Analytical Modeling and Discussionmentioning

confidence: 99%

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Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs

Liu

Arulkumaran

2009

2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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In this paper, we present the analytical modeling on the temperature dependent microwave noise in AlGaN/GaN HEMTs on Si substrate over a wide temperature range from -50 to 200 ο C. The noise source coefficients and small signal equivalent circuit parameters (ECPs) were extracted and their variations over temperature were fitted using a simple quadratic relationship. An analytical model for the overall noise parameters including temperature dependence is proposed based on the Pucel's PRC model and verified with the measured temperature-dependent noise parameters. The feedback capacitance C gd was found to be important to accurately simulate all the measured noise parameters over temperature.

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Section: Analytical Modeling and Discussionmentioning

confidence: 87%

Section: Analytical Modeling and Discussionmentioning

confidence: 99%

Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs

Liu

Arulkumaran

2009

2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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“…Figure 7 reveals that the relationship between the noise and frequency is near linear. Quantitatively, NF min is given by [ 21 , 22 , 23 ]

where f is frequency; k is the Fukui constant; C gs is the input gate-source capacitance; R s is the source series resistance, and R g is the gate series resistance. The NF min values of HEMT, HfO 2 -HEMT, and TiO 2 -HEMT are 1.94 dB, 1.79 dB, and 1.68 dB.…”

Section: Resultsmentioning

confidence: 99%

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Lin

2020

Micromachines

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This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO2 passivation layer to undoped AlGaN/GaN HEMT’s increases the value of the third-order intercept point (OIP3) by up to 70% at 2.4 GHz. Furthermore, the minimum noise figure (NFmin) of the HEMT with TiO2 passivation is significantly reduced.

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“…The built-in EEHEMT1 noise model with inaccessible noise equations did not match the measured data and no Verilog-a based model code was available. Therefore, simulation with an alternative analytical Fukui noise model [44], adopted for AlGaAs/InGaAs and InAlAs/InGaAs/InP HEMTs, was performed for verification purpose. An empirical noise model uses the noise factor F min (NF min = 10 dB F min ) equation from [10] with modified Fukui noise coefficient (k F ) for AlGaN/GaN HEMT [40]:…”

Section: Resultsmentioning

confidence: 99%

Compact modelling of InAlN/GaN HEMT for low noise applications

Sakalas

Šimukovič

Piotrowicz

et al. 2014

Semicond. Sci. Technol.

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This paper presents results of high-frequency noise modelling of InAlN/GaN high electron mobility transistors (HEMTs) with different formulations of the minimum noise figure NF min . Current-voltage characteristics and s-parameters of 0.15 μm gate length and 2 × 75 μm gate width InAlN/GaN HEMTs were measured at room temperature in a wide frequency range (300 MHz to 50 GHz) and bias range (V GS from −4.8 to 1 V and V DS from 0 to 21 V). Both the EEHEMT1 and Angelov GaN compact models yielded excellent agreement for transfer and output characteristics, transconductance g m , and f T , f max. High-frequency noise parameters NF min , R n , Γ OPT of InAlN/GaN HEMT were measured in 8-50 GHz frequency band. Noise formulation within the EEHEMT1 model underestimates the measured NF min and R n . The well known three-parameter PRC noise model is in a better agreement with the measured data but neglects the shot noise resulting from the gate leakage. The inductive degenerated source matching method and EEHEMT1 were used to design a single stage LNA operated at 8 GHz frequency. A 10 dB gain with an input reflection of −12 dB with a 2.5 dB of noise factor were obtained at 8 GHz.

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A new relationship between the Fukui coefficient and optimal current value for low-noise operation of field-effect transistors

Cited by 27 publications

References 2 publications

Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs

Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Compact modelling of InAlN/GaN HEMT for low noise applications

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