A new repeatable, optical writing and electrical erasing device based on photochromism and electrochromism of viologen

Gao, Lingxiao; Wei, Jian; Wang, Yuechuan; Ding, Guo-jing; Yang, Yulin

doi:10.1088/0964-1726/21/8/085006

Cited by 8 publications

(8 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The rise time is the time required for generation of carriers in the n or p region and tunnelling in the p-n junction, and is dependent on the width of the interlayer. As reported before 27 , the charge state of the BV molecules in the interlayer can be changed by UV illumination, thereby changing the film transmittance, but the response time is approximately several tens of seconds, much longer than the decay time in our work. Instead, considerable amount of trap states can be formed at the interlayer/p-and n-graphene sheets, thereby inducing multiple trappings of carriers, resulting in slower decay of photoexcited carriers in the graphene p-n device, compared with the field effect transistor structures containing pristine graphene 3,9 .…”

Section: Resultssupporting

confidence: 49%

High photoresponsivity in an all-graphene p–n vertical junction photodetector

et al. 2014

View full text Add to dashboard Cite

Intensive studies have recently been performed on graphene-based photodetectors, but most of them are based on field effect transistor structures containing mechanically exfoliated graphene, not suitable for practical large-scale device applications. Here we report highefficient photodetector behaviours of chemical vapor deposition grown all-graphene p-n vertical-type tunnelling diodes. The observed photodetector characteristics well follow what are expected from its band structure and the tunnelling of current through the interlayer between the metallic p-and n-graphene layers. High detectivity (B10 12 cm Hz 1/2 W À 1 ) and responsivity (0.4B1.0 A W À 1 ) are achieved in the broad spectral range from ultraviolet to near-infrared and the photoresponse is almost consistent under 6-month operations. The high photodetector performance of the graphene p-n vertical diodes can be understood by the high photocurrent gain and the carrier multiplication arising from impact ionization in graphene.

show abstract

Section: Resultssupporting

confidence: 49%

High photoresponsivity in an all-graphene p–n vertical junction photodetector

et al. 2014

View full text Add to dashboard Cite

show abstract

“…In the above discussion, strongly corrugated insulating or semiconducting structures were shown to exist on the surface of the n-type graphene layers with t D = 3 and 4 min, thereby possibly forming insulating or semiconducting interlayers between the metallic p-and n-graphene layers in the J4 and J5 devices, consistent with the film-type deposition of BV, as reported before. 26 This suggests that the J4 and J5 devices actually have a structure similar to an MIM or MSM diode, known to show rectifying IÀV behaviors. 27,28 The pÀn vertical tunneling diodes are much more simple in operation as well as in structure than the previous graphene vertical heterostructures 16 because the latter ones have three terminals including a gate and provide gate voltages more than (50 V for exhibiting IÀV properties with an on/off ratio of ∼10 4 .…”

Section: Resultsmentioning

confidence: 99%

Graphene p–n Vertical Tunneling Diodes

et al. 2013

View full text Add to dashboard Cite

Formation and characterization of graphene p-n junctions are of particular interest because the p-n junctions are used in a wide variety of electronic/photonic systems as building blocks. Graphene p-n junctions have been previously formed by using several techniques, but most of the studies are based on lateral-type p-n junctions, showing no rectification behaviors. Here, we report a new type of graphene p-n junction. We first fabricate and characterize vertical-type graphene p-n junctions with two terminals. One of the most important characteristics of the vertical junctions is the asymmetric rectifying behavior showing an on/off ratio of ~10(3) under bias voltages below ±10 V without gating at higher n doping concentrations, which may be useful for practical device applications. In contrast, at lower n doping concentrations, the p-n junctions are ohmic, consistent with the Klein-tunneling effect. The observed rectification results possibly from the formation of strongly corrugated insulating or semiconducting interlayers between the metallic p- and n-graphene sheets at higher n doping concentrations, which is actually a structure like a metal-insulator-metal or metal-semiconductor-metal tunneling diode. The properties of the diodes are almost invariant even 6 months after fabrication.

show abstract

“…As polymer structure for the viologen OEM, we chose a polystyrene, as the free‐radical polymerization of styrenes is well established to furnish high molecular weight polymers. The synthesis of the PVBV polymer as chloride salt has been reported before, [55] and as hexafluorophosphate salt once in the linear form [56,57] and once as 100 % cross‐linked [58] . Herein, to investigate the degree of cross‐linking on the performance as electrode material, we synthesized both the linear hexafluorophosphate polymer PVBV from monomer 1 , as well as cross‐linked polymers X‐PVBV using viologen‐based 2 as cross‐linker in molar ratios of 10 %, 25 % and 50 % (Scheme 2, NMR spectra of all compounds can be found in Figures S1–S11).…”

Section: Resultsmentioning

confidence: 99%

Anion‐Rocking Chair Batteries with Tuneable Voltage using Viologen‐ and Phenothiazine Polymer‐based Electrodes**

Bhosale,

Schmidt,

Penert

et al. 2023

ChemSusChem

View full text Add to dashboard Cite

Organic battery electrode materials offer the unique opportunity for full cells to operate in an anionrocking chair mode. For this configuration a pair of p‐type redox‐active electrode materials is required with a substantial potential gap between their redox processes. We herein investigate viologenfunctionalized polystyrenes as negative electrode paired with a phenothiazine polymer as positive electrode in all‐organic full cells. The 10% crosslinked viologen polymer X10‐PVBV gave better performance than the linear PVBV and was employed in a full cell as negative electrode with crosslinked poly(3‐vinyl‐N‐methylphenothiazine) (X‐PVMPT) as positive electrode. Three cell configurations regarding the voltage range were investigated, of which one with an operating potential of 0.9 V gave the highest performance. The full cell delivered a specific discharge capacity of 64 mA h g−1 (of X‐PVMPT) in the first cycle and a capacity retention of 79% after 100 cycles. This is one of only few reported anion rocking chair all‐organic cells and the first employing a  phenothiazine‐based positive electrode material.

show abstract

A new repeatable, optical writing and electrical erasing device based on photochromism and electrochromism of viologen

Cited by 8 publications

References 39 publications

High photoresponsivity in an all-graphene p–n vertical junction photodetector

High photoresponsivity in an all-graphene p–n vertical junction photodetector

Graphene p–n Vertical Tunneling Diodes

Anion‐Rocking Chair Batteries with Tuneable Voltage using Viologen‐ and Phenothiazine Polymer‐based Electrodes**

Contact Info

Product

Resources

About