A New Route to Carbon Film Coating by Anodic Electrodeposition from Ionic Liquid Containing Different Phenylsilane Derivatives

Hozuki, Nana; Takato, Hidetaka; Maruyama, Susumu; Kondo, Michio; Fujimoto, Kenjiro; Matsumoto, Yuji

doi:10.1246/cl.200537

Cited by 1 publication

(1 citation statement)

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“…In order to avoid additional decomposition of IL during chronoamperometry (CA) experiment, the applied potential was set to +2.2 V vs Ag, which is close to the maximum anodic potential within the potential window of IL used in this study. 25 Considering the standard redox potentials of, e.g. Ta/TaF 7 2− (-0.45 V vs SHE) and Ag/Ag + (+0.80 V vs SHE), 26 the applied potential of +2.2 V vs Ag should be enough for metal Ta to elute in the pentavalent state, though the equilibrium potential may be a little bit different depending on the kinds of electrolyte and the concentration of Ta ions in the electrolyte.…”

Section: Methodsmentioning

confidence: 99%

Room-Temperature Preparation of Ta Ions-Containing Ionic Liquid and its Vapor Deposition toward Ta-Oxide Film Coating

Hozuki¹,

Kaminaga²,

Maruyama³

et al. 2022

J. Electrochem. Soc.

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Ta ions-containing solutions, which are brown in color with no precipitation, were successfully prepared through an electroelution process with ionic liquid (IL). An as-delivered Ta metal plate covered with a passivation oxide film could be easily eluted even at room temperature by simply applying an anodic potential of, e.g. +2.2 V vs. Ag in [Bmim][PF6] IL. According to the quantity of electric charge required for oxidation of Ta, most Ta ions in the IL were suggested to be in an oxidation state of +5, which was also confirmed by x-ray photoemission spectroscopy (XPS). Ta ions in IL were found to thermally evaporate together with IL molecules by heating in a vacuum, forming a deposit of the Ta ions-containing IL on a substrate. The Ta concentrations in the deposits were reduced uniquely by about one order of magnitude from those in the original bulk source through the evaporation process under the present conditions. Furthermore, a possibility of the formation of thin film-like Ta oxide from such a Ta ions-containing IL deposit and its bulk droplet prepared on substrates by annealing in air at 1000oC will be discussed.

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Section: Methodsmentioning

confidence: 99%