A new short channel MOSFET structure (UMOST)

“…Ces dernières sont d'une part les SIP MOS et T MOS (source carrée), HEXFET (source hexagonale) et EPIFET (source linéaire) en ce qui concerne les structures D. MOS. Il s'agit d'autre part de la famille V. MOS à sillons linéaires et à source et grille interdigitées [6] ou non interdigitées [8]. On peut constater que tous les points relatifs aux diverses structures se situent en dessous des limites explicitées précédemment.…”

Section: Comparaison Avec Les Résultats Expérimen-unclassified

Limitation fondamentale dans les transistors MOS de puissance ; le compromis entre la résistance à l'état passant RON et la tension de claquage VDBR

Rossel

Tranduc

Gamboa

et al. 1981

Rev. Phys. Appl. (Paris)

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“…Power metal-oxide-semiconductor field-effect transistor ͑MOS-FETs͒ have been widely used in applications such as automatic electronics, wireless communication, desktop and laptop computers. One of the popular device structures for low and medium power application is UMOSFET, [1][2][3] where a U-shaped trench is etched in the Si substrate. In UMOSFET, gate and source terminals are located at the wafer surface and a drain terminal is located at the back side of wafers.…”

mentioning

confidence: 99%

The Effects of Hydrogen Annealing on Gate Oxide Integrity of U-Shaped Trench MOSFET with 400 Å Gate Oxide

Sharp

Madson

et al. 2006

J. Electrochem. Soc.

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The effects of hydrogen ͑H 2 ͒ annealing on the thick gate oxide integrity of the U-shaped trench metal-oxide-semiconductor-field effect transistor ͑UMOSFET͒ were investigated. H 2 annealing was performed after trench etch and before gate oxidation. It was observed that the gate oxide integrity ͑GOI͒ of the 400 Å gate oxide grown after H 2 annealing can be comparable to the standard approach ͑soft etch and sacrificial oxidation͒ when the trench width is kept at 0.65 m. When the trench width was reduced to 0.45 m the GOI of H 2 annealing samples was degraded slightly due to faceting at the transition region between trench sidewall and bottom. It was proven that using high-temperature gate oxidation, the UMOSFET with 0.45 m trench width and H 2 annealing has very high-quality gate oxide. The reduction of process steps and time and the potential for narrower trench make H 2 annealing an attractive process in trench MOSFET processing.

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A new short channel MOSFET structure (UMOST)

Cited by 29 publications

References 10 publications

Elektrische Antriebe 3

Elektrische Antriebe 3

Limitation fondamentale dans les transistors MOS de puissance ; le compromis entre la résistance à l'état passant RON et la tension de claquage VDBR

The Effects of Hydrogen Annealing on Gate Oxide Integrity of U-Shaped Trench MOSFET with 400 Å Gate Oxide

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