A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide film

High tunneling current and large resistance against stress were the main issue of tunnel oxide for scaling down the operation voltage of EEPROMs. In this letter, thin-tunnel oxides grown on a CF 4 pretreated silicon substrate were prepared and investigated for the first time. The fabricated oxide has about three orders of tunneling current higher than that of control one; furthermore, the stress induced anomalous and low electric field leakage currents were greatly suppressed. The improvement could be contributed to F-incorporation in oxide. This type of oxide is suitable for fabricating low-voltage EEPROMs and less process complexity was added.Index Terms-Anomalous current, CF 4 fluorinated oxide, lowvoltage EEPROM, plasma pretreatment, SILC, tunnel oxide.

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Thin tunnel oxide grown on silicon substrate pretreated by CF₄ plasma

Lee

Lei

Lee

2001

IEEE Electron Device Lett.

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Contributions of sidewall illumination and current spreading to the light emission of InGaN-GaN light-emitting diode arrays

Hsieh

Shih

et al. 2006

IEEE Photon. Technol. Lett.

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We investigate the contribution of sidewall illumination in InGaN-GaN quantum-well-based light-emitting diode (LED) arrays with various cell radii. The intensity contribution from the array sidewall decreases with the increase of radius as the perimeter/area ratio is reduced. We then compare the effects of current spreading in the LED arrays of different sizes and conclude that the effect of current spreading needs to be given full consideration when the cell size in a microarray becomes larger. This letter provides a novel approach to calculate the intensity contributions of sidewall illumination and current spreading to GaN-based LED arrays.

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A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide film

Cited by 2 publications

References 7 publications

Thin tunnel oxide grown on silicon substrate pretreated by CF₄ plasma

Thin tunnel oxide grown on silicon substrate pretreated by CF₄ plasma

Contributions of sidewall illumination and current spreading to the light emission of InGaN-GaN light-emitting diode arrays

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A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide film

Cited by 2 publications

References 7 publications

Thin tunnel oxide grown on silicon substrate pretreated by CF4 plasma

Thin tunnel oxide grown on silicon substrate pretreated by CF4 plasma

Contributions of sidewall illumination and current spreading to the light emission of InGaN-GaN light-emitting diode arrays

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Product

Resources

About

Thin tunnel oxide grown on silicon substrate pretreated by CF₄ plasma

Thin tunnel oxide grown on silicon substrate pretreated by CF₄ plasma