A New Simple Fabrication Method for Silicon Nanowire-Based Accelerometers

Kim, Taeyup; Jang, Seohyeong; Chang, Bobaro; Sung, Jinwoo; Lee, Seung–Hyun; Ko, Hyoungho; Koo, Kyo‐in; Cho, Dong-il D.

doi:10.1109/transducers.2019.8808764

Cited by 9 publications

(17 citation statements)

References 12 publications

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“…The overall volume of the sensor is 360 μm × 300 μm × 40 μm, a 36% reduction in total area as compared to commercial devices. The device has 30 kHz as first resonance frequency along the sensing axis and sensitivity of 98 mV/ g ; Figure c shows the SEM image of the fabricated device . A piezoresistive cantilever and two spiral liquid channels based angular accelerometer was reported by Jo et al The cantilever is placed between the liquid channels, and when there is external angular acceleration, an inertial force is applied on the liquid which causes differential pressure on the cantilever, resulting in deformation and resistance changes of the cantilever.…”

Section: Conventional Mems Acceleration Sensorsmentioning

confidence: 96%

Section: Conventional Mems Acceleration Sensorsmentioning

confidence: 99%

“…The device has 30 kHz as first resonance frequency along the sensing axis and sensitivity of 98 mV/g; Figure 3c shows the SEM image of the fabricated device. 26 A piezoresistive cantilever and two spiral liquid channels based angular accelerometer was reported by Jo et al The cantilever is placed between the liquid channels, and when there is external angular acceleration, an inertial force is applied on the liquid which causes differential pressure on the cantilever, resulting in deformation and resistance changes of the cantilever. The device was made with spiral channels comprised of either 5, 12.5, or 25 turns, and the greatest number of turns resulted in the highest sensitivity of 5.70 × 10 −3 (ΔR/R), which is 28.5 times higher than liquid ring channel; Figure 3d shows the fabricated angular accelerometer.…”

Section: ■ Conventional Mems Acceleration Sensorsmentioning

confidence: 99%

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Acceleration Sensors: Sensing Mechanisms, Emerging Fabrication Strategies, Materials, and Applications

Babatain

Bhattacharjee

Hussain

et al. 2021

ACS Appl. Electron. Mater.

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Accelerometers are among the most mature sensor technologies with a broad range of applications in multiple fields and industries. They represent the most widely used microelectromechanical system (MEMS) devices with excellent and reliable performance. MEMS acceleration sensors established dominance mainly in navigation and control applications. In recent years, however, recent technologies and materials have emerged that introduce novel sensing mechanisms, improve performance, enable customization, reduce cost, and reduce fabrication complexity. Herein, the recent advances in accelerometers based on MEMS and recent emerging technologies are reviewed. This work provides a comprehensive review of accelerometers' sensing mechanisms and the main characteristics and features of each type of sensor, material, and fabrication strategies used to fabricate them. From the aspect of sensor application, this work focuses on reviewing applications that demonstrate the use of accelerometers manufactured using unconventional technologies and materials in prevailing fields such as healthcare monitoring, automotive industry, navigation, building, and structural monitoring. Moreover, challenges and future efforts needed to be addressed in this field are summarized.

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Section: Conventional Mems Acceleration Sensorsmentioning

confidence: 96%

Section: Conventional Mems Acceleration Sensorsmentioning

confidence: 99%

Section: ■ Conventional Mems Acceleration Sensorsmentioning

confidence: 99%

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Acceleration Sensors: Sensing Mechanisms, Emerging Fabrication Strategies, Materials, and Applications

Babatain

Bhattacharjee

Hussain

et al. 2021

ACS Appl. Electron. Mater.

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“…Originally developed for the fabrication of free-standing Si micromechanical structures within bulk Si substrates, [29][30][31][32][33][34][35] the technique was recently extended into the nanoscale. [36][37][38][39][40] Using a two-stage etching technique, NWs are obtained at the upper surface of the device layer, i.e., coplanar with the MEMS surface.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

“…Si NWs with a critical dimension (CD) of 20 nm could be obtained after a 10 μm-deep etch step, thereby bridging a three-order-of-magnitude scale gap. [39,43] An array of such Si NWs fabricated within bulk Si is depicted in Figure 2a, where all features were monolithically machined from the same Si [36][37][38][39][40]47] Column (ii): Si NW fabrication in thin SOI with MEMS fabricated subsequently within a thick polySi layer. [18] Fabrication steps: a) patterning of etch mask by nanolithography, b) shallow Si etch to define NW partially in (i) and fully in (ii), c) passivation for protection against further Si etch, d) polySi growth in (ii) to fabricate MEMS device layer, e) deep Si etch for MEMS fabrication, and f ) release through BOX etching.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

Silicon Nanowires Driving Miniaturization of Microelectromechanical Systems Physical Sensors: A Review

et al. 2023

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The miniaturization of microelectromechanical systems (MEMS) physical sensors is driven by global connectivity needs and is closely linked to emerging digital technologies and the Internet of Things. Strong technical advantages of miniaturization such as improved sensitivity, functionality, and power consumption are accompanied by significant economic benefits due to semiconductor manufacturing. Hence, the trend to produce smaller sensors and their driving force resemble very much those of the miniaturization of integrated circuits (ICs) as described by Moore's law. In this respect, with its IC‐, and MEMS‐compatibility, and scalability, the silicon nanowire is frequently employed in frontier research as the sensor building block replacing conventional sensors. The integration of the silicon nanowire with MEMS has thus generated a multiscale hybrid architecture, where the silicon nanowire serves as the piezoresistive transducer and MEMS provide an interface with external forces, such as inertial or magnetic. This approach has been reported for almost all physical sensor types over the last decade. These sensors are reviewed here with detailed classification. In each case, associated technological challenges and comparisons with conventional counterparts are provided. Future directions and opportunities are highlighted.

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Non-linear Raman shift-stress behavior in top-down fabricated highly strained silicon nanowires

Spejo

Concha

Santos

et al. 2020

Journal of Applied Physics

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Strain engineering is a key technology to continue Moore's law with silicon or any other foreseen semiconductor in very large scale integration. The characterization of strain in nanostructures is important to determine the potential of these technologies, and it is typically performed using micro-Raman when investigating strained silicon. Here, we report on the Raman shift-stress behavior from the (001) silicon surface of highly strained ultra-thin (15 nm-thick) suspended nanowires with stresses in the range of 0–6.3 GPa along the [110] direction. We employ a strain technology that offers a precise control of stress values at large sampling while reducing variability. The stress level of the nanostructures has been accurately evaluated by the finite element method simulations and further correlated to the Raman spectra. For stresses below 4.5 GPa, the aforementioned behavior was linear and the extracted stress shift coefficient was in agreement with those reported in the literature. For stresses greater than 4.5 GPa, we show that the Raman shift-stress behavior resembles a quadratic function.

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A New Simple Fabrication Method for Silicon Nanowire-Based Accelerometers

Cited by 9 publications

References 12 publications

Acceleration Sensors: Sensing Mechanisms, Emerging Fabrication Strategies, Materials, and Applications

Acceleration Sensors: Sensing Mechanisms, Emerging Fabrication Strategies, Materials, and Applications

Silicon Nanowires Driving Miniaturization of Microelectromechanical Systems Physical Sensors: A Review

Non-linear Raman shift-stress behavior in top-down fabricated highly strained silicon nanowires

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