A new spectrometer for total reflection X-ray fluorescence analysis of light elements

Streli, Christina; Wobrauschek, P.; Unfried, E.; Aiginger, H.

doi:10.1016/0168-9002(93)90803-p

Cited by 25 publications

(3 citation statements)

References 10 publications

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“…To eliminate the resulting open degree of freedom, X-ray fluorescence (XRF) measurements have been performed. This technique and its derivates provide an element sensitive characterization method with sensitivities down to the nanogram scale and even below which in our setup is equivalent to an accuracy better than AE1% [4][5][6]. In addition to the high specific element sensitivity, these techniques provide the advantage of being non-destructive and, compared to other techniques like RBS or SIMS, no ultra high vacuum is needed.…”

mentioning

confidence: 94%

Characterization of AlGaInN layers using X‐ray diffraction and fluorescence

Groh

Hums

Bläsing

et al. 2011

Physica Status Solidi (b)

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Quantum well structures for nitride-based LEDs are mainly grown in c-direction, whereby the quantum confined Starkeffect (QCSE) reduces the overlap of the electron and hole wave function and with it the internal quantum efficiency. The reason for that is the difference in polarization of the quantum well and barrier materials. In order to balance these polarizations, quaternary (AlGaIn)N layers for the later use as barrier material have been grown. In addition to the bandgap energy, another parameter, the polarization, can be controlled in this way. As a standard characterization method X-ray diffraction measurements have been performed. Due to the impossibility of fully determining the composition using this method, total reflection X-ray-fluorescence (TXRF) has been used to get the missing information.

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mentioning

confidence: 94%

Characterization of AlGaInN layers using X‐ray diffraction and fluorescence

Groh

Hums

Bläsing

et al. 2011

Physica Status Solidi (b)

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“…1 The main component is an energy-dispersive high-purity germanium [Ge(HP)] detector, which is equipped with a thin entrance window, an ion-implanted contact layer, a thin dead layer and a low-noise preamplifier. 2 An electron trap is installed to suppress secondary electrons reaching the detector crystal. A full width at half-maximum of 135 eV at 5.9 keV was measured.…”

Section: Methodsmentioning

confidence: 99%

Synchrotron radiation‐excited glancing incidence xrf for depth profile and thin‐film analysis of light elements

Kregsamer¹,

Streli²,

Wobrauschek³

et al. 1999

X‐Ray Spectrom.

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First results of depth profile and thin-film analysis by glancing incidence x-ray fluorescence analysis of low-Z elements (carbon to aluminum), usually not detectable by conventional instruments, were obtained by synchrotron radiation excitation (SSRL, Beamline III-4) and by a special energy-dispersive spectrometer with high efficiency for low-energy fluorescence radiation [Ge(HP) detector with an ultra-thin 300 nm entrance window]. The results of calculations taking into account several sample parameters of interest agree with the measurements. Results are presented for the determination of depth profiles of Na, Mg and Al implanted in Si wafers and for thin films of Al and a C bulk sample.

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“…By TXRF technique, picogram amounts of elements ranging from Cl to U can be determined in aqueous residues in sample volumes of the order of 10 µl. The history of the development of TXRF instrumentation and technique has been summarized elsewhere (Yoneda and Horiuchi 1971;Aiginger and Wobrauschek 1974;Wobrauschek and Aiginger 1975;Knoth and Schwenke 1978) and there have been several time to time reviews which describe the principles of TXRF and various new design for its instrumentation to increase the capability of technique (Wobrauschek and Aiginger 1986;Yun and Bloch 1990;Wobrauschek et al 1991;Rieder et al 1993;Streli et al 1993;Noma and Iida 1994;Waldschlager 2000). Several experimental determinations reported in literature indicate that the detection capability of TXRF is in the range of nanogram to picogram.…”

Section: Introductionmentioning

confidence: 99%

Development of a total reflection X-ray fluorescence spectrometer for ultra-trace element analysis

et al. 2002

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A simple and fairly inexpensive total reflection X-ray fluorescence (TXRF) spectrometer has been designed, constructed and realized. The spectrometer is capable of ultra-trace multielement analysis as well as performs surface characterization of thin films. The TXRF setup comprises of an X-ray generator, a slitcollimator arrangement, a monochromator/cutoff-stage, a sample reflector stage and an X-ray detection system. The glancing angle of incidence on the two reflectors is implemented using a sine-bar mechanism that enables precise angle adjustments. An energy dispersive detector and a GM counter are employed for measuring respectively the fluorescence intensities and the direct X-ray beam intensity. A Cu-target X-ray generator with its line focus window is used as an excitation source. The spectrometer is quite portable with its compact design and use of a peltier cooled solid state detector for energy dispersive detection. Alignment and characterization of the TXRF system has been performed and the minimum detection limits for various elements have been determined to be in the range of 100 pg to 5 ng even at low X-ray generator powers of 30 kV, 5 mA. The capability of the TXRF system developed for thin film characterization is also demonstrated.

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A new spectrometer for total reflection X-ray fluorescence analysis of light elements

Cited by 25 publications

References 10 publications

Characterization of AlGaInN layers using X‐ray diffraction and fluorescence

Characterization of AlGaInN layers using X‐ray diffraction and fluorescence

Synchrotron radiation‐excited glancing incidence xrf for depth profile and thin‐film analysis of light elements

Development of a total reflection X-ray fluorescence spectrometer for ultra-trace element analysis

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