A new technique for decreasing the characterization time of passive load-pull tuners to maximize measurement throughput

Roff, C.; Graham, J.D.; Sirois, J.; Noori, Basim

doi:10.1109/arftg.2008.4804298

Cited by 12 publications

(3 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To reduce the complexity of the harmonic load-pull measurement setup, efforts have been made in the direction of trying to decrease the fundamental load tuning points or avoid the impedance tuners for harmonic frequencies (while, of course, maintaining the characterization accuracy). In the work presented in Reference [8], a technique is proposed to achieve high density transistor characterization by interpolating a small (sparse) number of measured load tuning positions. The overall characterization time is decreased while the same measurement throughput is maintained.…”

Section: Introductionmentioning

confidence: 99%

X-parameter measurement on a GaN HEMT device: Complexity reduction study of load-pull characterization test setup

Wang¹

2015

J. Semicond.

View full text Add to dashboard Cite

Characterization of power transistors is an indispensable step in the design of radio frequency and microwave power amplifiers. A full harmonic load-pull measurement setup is normally required for the accurate and comprehensive characterization of RF power transistors. The setup is usually highly complex, leading to a relatively high hardware cost and low measurement throughput. This paper presents X-parameter measurement on a gallium nitride (GaN) high-electron-mobility transistor and studies the potential of utilizing an X-parameter-based modeling technique to highly reduce the complexity of the harmonic load-pull measurement setup for transistor characterization. During the X-parameter measurement and characterization, load impedance of the device is tuned and controlled only at the fundamental frequency and is left uncontrolled at other higher harmonics. However, it proves preliminarily that the extracted X-parameters can still predict the behavior of the device with moderate to high accuracy, when the load impedance is tuned up to the third-order harmonic frequency. It means that a fundamental-only load-pull test setup is already enough even though the device is to be characterized under load tuning up to the third-order harmonic frequency, by utilizing X-parameters.

show abstract

Section: Introductionmentioning

confidence: 99%

X-parameter measurement on a GaN HEMT device: Complexity reduction study of load-pull characterization test setup

Wang¹

2015

J. Semicond.

View full text Add to dashboard Cite

show abstract

“…Measurements carried out using passive load pull are rapid, but the measurement throughput is limited [7], due to the time-consuming pre-characterization of the tuner. But its ease of usage has built the trust of the user; and the passive loadpull system is, by far, the leading industry-adopted load-pull solution [8,9].…”

Section: Introductionmentioning

confidence: 99%

Agile harmonic envelope load-pull system enabling reliable and rapid device characterization

Hashmi

Clarke

Lees

et al. 2010

Meas. Sci. Technol.

View full text Add to dashboard Cite

This paper presents a robust heterodyne mode of operation for the envelope load-pull system. Extensive performance evaluation and verification demonstrate the reliable, flexible and accurate nature of the system. The new system was compared with the active open-loop load pull, with the new system standing out as having superior performance in terms of measurement throughput, thereby improving the yield and turn-around in the design of power amplifiers. Finally, measurements on commercially available microwave transistor devices show some of the immediate recognized application areas of the developed system.

show abstract

“…Singlestub tuner consists of short or open circuit terminal line (length of m) in parallel or series, n from the load, as shown in Figure 2. In a single-stub tuner, its susceptance can be adjusted by two adjustable parameters, which are m and n. Appropriate distance (n) is selected so that admittance, from the stub to the load, is Y in = Y 0 + jB, then appropriate length (m) of stub is selected so that susceptance is Y 0 = −jB, so as to achieve matching [11][12][13][14].…”

Section: Principlementioning

confidence: 99%

A New Type of High-Power Microwave Impedance Tuner Based on Load-Pull With a Rapid Calibration Method

Cheng¹,

Sun²,

Wang³

et al. 2014

PIER C

View full text Add to dashboard Cite

Abstract-For the measurement of microwave device in high-power, traditional methods are inefficient, inaccurate and not on-line real-time measurement. A new type of high-power microwave impedance tuner (26.5 GHz ∼ 40 GHz) based on load-pull technique and a corresponding rapid calibration method based on curve fitting are proposed. A new structure using increased width rectangular waveguide slotted in the center is adopted as the main transmission line. In order to prevent the leak of electromagnetic waves transferring in rectangular waveguide, two choke grooves are added in upper cover plate of the waveguide cavity. The results (standing wave ratio range of 1.02 ∼ 10.98, insertion loss of 0.063 dB at minimum standing wave ratio) show by practical measurement that this structure and method are feasible. The device can meet the requirement of design, and the new method has less time for calibration.

show abstract

A new technique for decreasing the characterization time of passive load-pull tuners to maximize measurement throughput

Cited by 12 publications

References 6 publications

X-parameter measurement on a GaN HEMT device: Complexity reduction study of load-pull characterization test setup

X-parameter measurement on a GaN HEMT device: Complexity reduction study of load-pull characterization test setup

Agile harmonic envelope load-pull system enabling reliable and rapid device characterization

A New Type of High-Power Microwave Impedance Tuner Based on Load-Pull With a Rapid Calibration Method

Contact Info

Product

Resources

About