1989
DOI: 10.1002/jemt.1060110217
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A new technique for preparing metal/oxide TEM cross sections

Abstract: H i g h q u a l i t y , e l e c t r o n t r a n s p a r e n t specimens o f m e t a l / o x i d e cross s e c t i o n s a r e necessary t o p e r f o r m some of t h e more s o p h i s t i c a t e d s t u d i e s i n v o l v i n g TEM and STEM a p p l i c a t i o n s . d u r a b l e specimens i n a simple and c o n s i s t e n t f a s h i o n . T h i s communication d e s c r i b e s a t e c h n i q u e t h a t can be used t o p r e p a r e specimens o f m e t a l i o x i d e c r o s s s e c t i o n s i n a 3 … Show more

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“…Since the failure mechanism in these systems often involves spallation of the ceramic coating from the metallic substrate, it is important to prepare cross-sectional thin films of the ceramic-metal interface for transmission electron microscopy (TEM) in order to relate service performance of the coatings with phase distribution and microstructure in this region. The preparation of cross-sectional specimens for TEM has been described previously on several occasions (Abraham and Buicchi, 1974;Bravman and Sinclair, 1984;Doychak, 1989;Flutie, 1986;Shen and Marcus, 1980;Wetzel, 19891, particularly for systems involving semiconductor substrates. The basic procedure involves joining several interfaces by means of a suitable epoxy and slicing this resulting composite with a saw to obtain a cross-sectional thin film.…”
Section: Introductionmentioning
confidence: 99%
“…Since the failure mechanism in these systems often involves spallation of the ceramic coating from the metallic substrate, it is important to prepare cross-sectional thin films of the ceramic-metal interface for transmission electron microscopy (TEM) in order to relate service performance of the coatings with phase distribution and microstructure in this region. The preparation of cross-sectional specimens for TEM has been described previously on several occasions (Abraham and Buicchi, 1974;Bravman and Sinclair, 1984;Doychak, 1989;Flutie, 1986;Shen and Marcus, 1980;Wetzel, 19891, particularly for systems involving semiconductor substrates. The basic procedure involves joining several interfaces by means of a suitable epoxy and slicing this resulting composite with a saw to obtain a cross-sectional thin film.…”
Section: Introductionmentioning
confidence: 99%