A New Temperature Transducer for Local Temperature Compensation for Piezoresistive 3-D Stress Sensors

Kayed, Mohammed O.; Balbola, Amr A.; Moussa, Walied A.

doi:10.1109/tmech.2019.2891069

Cited by 9 publications

(3 citation statements)

References 27 publications

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“…To successfully extract the stress components, σ 11 and σ 33 , at different temperatures, this requires knowing the temperature changes within the sensing chip for compensation. For temperature measurement, a temperature sensor using annular n-type piezoresistor, presented by the authors in earlier publication [32], is utilized in this study. This temperature sensor is featured on the same sensing chip, over (111) silicon substrate, to share the same thermal conditions with the stress sensor.…”

Section: The N-type Eight-element Stress/strain Rosette With Temperat...mentioning

confidence: 99%

Development of MEMS-based piezoresistive 3D stress/strain sensor using strain technology and smart temperature compensation

Kayed

Balbola

Lou

et al. 2021

J. Micromech. Microeng.

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This paper presents the microfabrication and testing of a membrane-free eight-element single-polarity (n-type) sensing rosette integrated with strained silicon technology over (111) silicon plane to measure the full 3D stress/strain tensor with full temperature compensation. Such n-type piezoresistive (PR) sensor has low sensitivity to the out-of-plane components compared to the in-plane components. To improve the sensitivity of such sensors to the out-of-plane components, a strained silicon technique was integrated into the sensing rosette during the microfabrication process using a highly compressive film produced by plasma enhanced chemical vapor deposition silicon nitride. For experimental verification, a prototype device featuring the proposed sensing rosette was microfabricated using semiconductors fabrication processes. The experimental analysis applied both, in-plane and out-of-plane stresses at different temperatures over a range from −20 °С to 60 °С. In this work, a smart sensing calibration algorithm, utilizing machine learning, is employed to reduce the temperature impact on both sensitivity and resistance of PR coefficients during stress measurement. The developed sensor is capable of accurately extracting the applied stress/strain components with temperature compensation.

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Section: The N-type Eight-element Stress/strain Rosette With Temperat...mentioning

confidence: 99%

Development of MEMS-based piezoresistive 3D stress/strain sensor using strain technology and smart temperature compensation

Kayed

Balbola

Lou

et al. 2021

J. Micromech. Microeng.

Self Cite

View full text Add to dashboard Cite

show abstract

“…(1) Kayed et al have proposed a new temperature transducer using a full-circular n-type piezoresistor over the (111) silicon plane as an accurate solution for real-time temperature compensation. (2) Therefore, to maximize the role of these new sensors, research on remote and real-time environmental monitoring systems with excellent performance is of great importance.…”

Section: Introductionmentioning

confidence: 99%

Remote and Real-time Monitoring System for Indoor Environment Based on ZigBee and LabVIEW

Zhang¹,

Jiang²,

Lin³

et al. 2020

Sensors and Materials

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“…Some other important aspects are also affected by temperature [9]. Slight variation in temperature may lead to major drift in acquired signal.For the piezoeresitive sensor many temperature compensation method has been implementated [31] . The (CNTs) materials are used to design MEMS sensors due to its outstanding mechanical and electrical properties .CNTs are the encouraging Nano-structured material to be suggested in the field of micro-sensing technology.…”

mentioning

confidence: 99%

Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor

Devi

Gill

2021

Silicon

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In silicon-based piezoresistive pressure sensor, the accuracy of the sensor is affected mainly by thermal drift and the sensitivity of the sensor varies with the rise in temperature. Here, the temperature effects on the desired representation of the sensor are analysed .Use of smart material Carbon nanotubes ( CNT) and a few effective temperature compensation techniques are presented in this study to reduce the temperature effect on the accuracy of the sensor. Resistive compensation employed extra piezoresistors with Negative Temperature Coefficient of Resistivity (TCR) for temperature compensation. The attainment of the desired compensation techniques is highly compatible with the MEMS device fabrication . The compensated pressure sensor is supremacy for pressure measurement with temperature variations. Though various techniques have been suggested and put into actuality with successful attainment, the techniques featuring easy implementation and perfect compatibility with existing schemes are still blooming demanded to design a piezoresistive pressure sensor with perfect comprehensive performance. In this paper, CNT piezoresistive material has been employed as sensing elements for pressure sensor and compared with silicon in terms of output voltage and sensor performance degradation at higher temperature. Pressure sensors using CNT and silicon piezo resistive sensing materials were simulated on silicon (100) diaphragm by ANYSIS . Based on simulation results, silicon and CNT both pressure sensor also shows better results at near room temperature. With the increasing temperature it is observed that silicon pressure output underestimated by 23%.

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A New Temperature Transducer for Local Temperature Compensation for Piezoresistive 3-D Stress Sensors

Cited by 9 publications

References 27 publications

Development of MEMS-based piezoresistive 3D stress/strain sensor using strain technology and smart temperature compensation

Development of MEMS-based piezoresistive 3D stress/strain sensor using strain technology and smart temperature compensation

Remote and Real-time Monitoring System for Indoor Environment Based on ZigBee and LabVIEW

Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor

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