A new transparent conductive thin film In2O3:Mo

Meng, Yu

doi:10.1016/s0040-6090(01)01142-7

Cited by 188 publications

(67 citation statements)

References 9 publications

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“…It has been shown that the electrical properties of In 2 O 3 can be drastically changed by doping with Sn, Mo [105,106], Zr, Ti [107,108], and W [109]. .…”

Section: In 2 O 3 -Basedmentioning

confidence: 99%

Metal oxides for thermoelectric power generation and beyond

Feng

Jiang

Ghafari

et al. 2017

Adv Compos Hybrid Mater

119

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Metal oxides are widely used in many applications such as thermoelectric, solar cells, sensors, transistors, and optoelectronic devices due to their outstanding mechanical, chemical, electrical, and optical properties. For instance, their high Seebeck coefficient, high thermal stability, and earth abundancy make them suitable for thermoelectric power generation, particularly at a high-temperature regime. In this article, we review the recent advances of developing high electrical properties of metal oxides and their applications in thermoelectric, solar cells, sensors, and other optoelectronic devices. The materials examined include both narrow-band-gap (e.g., Na x CoO 2 , Ca 3 Co 4 O 9 , BiCuSeO, CaMnO 3 , SrTiO 3 ) and wide-band-gap materials (e.g., ZnO-based, SnO 2 -based, In 2 O 3 -based). Unlike previous review articles, the focus of this study is on identifying an effective doping mechanism of different metal oxides to reach a high power factor. Effective dopants and doping strategies to achieve high carrier concentration and high electrical conductivities are highlighted in this review to enable the advanced applications of metal oxides in thermoelectric power generation and beyond.

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“…It has been shown that the electrical properties of In 2 O 3 can be drastically changed by doping with Sn, Mo [105,106], Zr, Ti [107,108], and W [109]. .…”

Section: In 2 O 3 -Basedmentioning

confidence: 99%

Metal oxides for thermoelectric power generation and beyond

Feng

Jiang

Ghafari

et al. 2017

Adv Compos Hybrid Mater

119

View full text Add to dashboard Cite

show abstract

“…If Sn replaces In on a bulk site without any compensating defects it will act as a one electron donor, similar to P in Si. There is also a growing interest in alternative dopants such as Mo [85][86][87][88][89][90], W [91], Nb [92], Ti [93] and F on O sites [94]. In particular very impressive mobilities in excess of 100 cm 2 V −1 s −1 have been achieved in polycrystalline films of In 2 O 3 doped with Mo [87,89], which it is claimed can act as a 3 electron donor [85].…”

Section: Bulk N-type Doing: Chemical Aspectsmentioning

confidence: 99%

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Egdell

2015

Defects at Oxide Surfaces

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This article reviews the impact of defects and doping on the surface electronic structure of indium oxide, a wide gap oxide semiconductor which under degenerate doping becomes an important transparent conducting material. Topics covered include recent evidence for carrier accumulation at In 2 O 3 surfaces when there is a low bulk doping level and the profound effects of doping on core and valence photoemission spectra. The importance of molecular beam epitaxy in growth of single crystal samples is emphasised. IntroductionTransparent conducting oxides (TCOs) combine the usually orthogonal properties of optical transparency in the visible region with a high electrical conductivity [1][2][3][4]. TCOs already find widespread application as the window electrode in display devices including liquid crystal displays and electroluminescent display devices. A TCO electrode is also an essential component in many designs of solar cell [5,6]. In addition there is a growing interest in "transparent electronics" where TCO materials are employed in a more active role, for example in light emitting diodes [7] or lasers operating in the ultraviolet regime. The TCO market is worth around $1.6 billion per annum, with upward of 80 % of this sum based on LCD displays. Indium oxide (In 2 O 3 ) is amenable to n-type doping with Sn to give a prototype TCO usually-but somewhat misleadingly-referred to as indium tin oxide or ITO. At present ITO dominates the TCO market as the material offers a better combination of conductivity and transparency than alternatives such as doped ZnO or SnO 2 . In principle, doped CdO could achieve better performance [8], but Cd is highly toxic. Despite some recent reports of respiratory disease and even deaths [9] among workers in the ITO industry, indium is generally regarded as relatively

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“…TCO has unique characteristics such as low electrical resistivity (< 10 -3 Ω-cm) and high optical transmittance in the visible region (> 80 %) with a wide energy band gap (3.70 eV) [1][2][3] . Due to these combined unique properties, TCO has been used in a wide range of applications such as flat panel displays, photovoltaic cells, light emitting diodes, solar cells, barrier layers in tunnel junctions, and thin film transistor (TFT) [4][5][6][7][8] .…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Transport Characterizations of Electron Beam Evaporated V Doped In2O3 Thin Films

et al. 2016

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Vanadium (5 at. %) doped Indium Oxide (V: In 2 O 3 ) thin films with different thicknesses (50 nm, 100 nm and 150 nm) were prepared onto glass substrate by electron beam evaporation technique in a vacuum of about 4×10 -3 Pa. X-ray diffraction (XRD) pattern revealed that the prepared films of thickness 50 nm are amorphous in nature. Temperature dependence of electrical resistivity was studied in the 300 < T < 475 K temperature range. The films exhibit a metallic behavior in the 300 < T < 380 K range with a positive temperature coefficient of the resistivity (TCR), whereas at T > 380 K, the conduction behavior turns into a semiconductor with a negative TCR. Optical studies revealed that the films of thickness 50 nm possess high transmittance of about 86 % in the near-infrared spectral region. The direct optical band gap lies between 3.26 and 3.00 eV depending on the film thickness.

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A new transparent conductive thin film In2O3:Mo

Cited by 188 publications

References 9 publications

Metal oxides for thermoelectric power generation and beyond

Metal oxides for thermoelectric power generation and beyond

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Electrical and Optical Transport Characterizations of Electron Beam Evaporated V Doped In2O3 Thin Films

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