A new Ultra Precision Interferometer for absolute length measurements down to cryogenic temperatures

Schödel, René; Walkov, Alexander; Zenker, Michael; Bartl, Guido; Meeß, Rudolf; Hagedorn, D.; Gaiser, Christof; Thummes, G.; Heltzel, Stan

doi:10.1088/0957-0233/23/9/094004

Cited by 29 publications

(22 citation statements)

References 21 publications

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“…Multi-wavelength phase-shifting interferometry was used to measure strain maps of the complete sample surface with high accuracy using the PTB (Physikalisch-Technische Bundesanstalt) ultraprecision interferometer (UPI) [54] with a sample environment which allows one to heat the sample (up to 200 °C) and to apply an electric field ( Figure 15). Absolute length change measurements were evaluated at room temperature and 100 °C using a commercial PZT sample.…”

Section: Full-field Multi-wavelength Phase-shifting Interferometrymentioning

confidence: 99%

High temperature measurement and characterisation of piezoelectric properties

Stevenson

Quast

Bartl

et al. 2015

J Mater Sci: Mater Electron

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Currently available high performance piezoelectric materials, predominantly based on lead zirconate titanate (PZT), are typically limited to operating temperatures of around 200 °C or below. There are many applications in sectors such as automotive, aerospace, power generation and process control, oil and gas, where reliable operation at higher temperatures is required for sensors, actuators and transducers. New materials are being actively developed to meet this need. Development and application of new and existing materials requires reliable measurement of their properties under these challenging conditions. This paper reviews the current state of the art in measurement of piezoelectric properties at high temperature, including direct and converse piezoelectric measurements and resonance techniques applied to high temperature measurements. New results are also presented on measurement of piezoelectric and thermal expansion and the effects of sample distortion on piezoelectric measurements. An investigation of the applicability of resonance measurements at high temperature is presented, and comparisons are drawn between the results of the different measurement techniques. New results on piezoelectric resonance measurements on novel high temperature piezoelectric materials, and conventional PZT materials, at temperatures up to 600 °C are presented.

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Section: Full-field Multi-wavelength Phase-shifting Interferometrymentioning

confidence: 99%

High temperature measurement and characterisation of piezoelectric properties

Stevenson

Quast

Bartl

et al. 2015

J Mater Sci: Mater Electron

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“…Thermal expansion of ultra stable materials at cryogenic temperatures is of increasing scientific interest driven by technological applications [2][3][4][5][6][7] . High accuracy CTE values at cryogenic temperatures are essential e.g.…”

Section: Introductionmentioning

confidence: 99%

Thermal expansion coefficient of single-crystal silicon from 7 K to 293 K

et al. 2015

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We measured the absolute lengths of three single crystal silicon samples by means of an imaging Twyman-Green interferometer in the temperature range from 7 K to 293 K with uncertainties of about 1 nm. From these measurements we extract the coefficient of thermal expansion with uncertainties in the order of 1 × 10 −9 /K. To access the functional dependence of the length on the temperature usually polynomials are fitted to the data. Instead we use a physically motivated model equation with 7 fit parameters for the whole temperature range. The coefficient of thermal expansion is obtained from the derivative of the best fit. The measurements conducted in 2012 and 2014 demonstrate a high reproducibility and the agreement of two independently produced samples supports single crystal silicon as reference material for thermal expansion. Although the results for all three samples agree with each other and with measurements performed at other institutes, they significantly differ from the recommended values for thermal expansion of crystalline silicon.

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“…Alternatively, thermal expansion coefficient was measured in Physikalisch-Technische Bundesanstalt (PTB) with PTB's Ultra Precision Interferometer (UPI) described in [25]. For this, sample 2 with the same dimensions and specifications but a slightly better parallelism was used.…”

Section: Methodsmentioning

confidence: 99%

Thermo-optic properties of Yb:Lu2O3 single crystals

et al. 2015

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Lu 2 O 3 ). Initial growth attempts of sesquioxides utilized the Verneuil method [2,3] or the floating zone technique [4]. The resulting mm-size crystals of low quality were utilized for the initial determination of the optical and thermomechanical properties of these materials and even allowed for first flash-lamp-pumped laser experiments [5]. Afterward, different growth methods such as the laser-heated pedestal growth (LHPG) [6], the micro-pulling down technique [7] and the Czochralski technique [8] were applied, but still the crystals were limited in size and quality. It was not before 2008 that by the optimization of the heat exchanger method [9] the growth of cm-scale single-crystalline sesquioxides with excellent optical quality became possible [10]. In the following years, in particular cubic sesquioxide host material lutetia (Lu 2 O 3 ) has been shown to be an excellent host material for various rare earth ions [11]. Efficient and high-power laser operation has been demonstrated utilizing various laser ions such as Yb 3+ [12,13] at 1 µm, Tm 3+ [14] and Ho 3+ [15] at 2 µm as well as Er 3+ at 3 µm [16].These outstanding laser results obtained in the past motivate a reexamination of the thermo-optic properties of Lu 2 O 3 that affect the parameters of the thermal lens. The lens-like behavior is related with three main effects, namely temperature dependence of the refractive index (expressed by the thermo-optic coefficient, dn/dT), end-bulging related to the thermal expansion coefficient α, as well as photoelastic effect that is responsible for the lens astigmatism and birefringence losses. Under the plane stress approximation (that refers to the diode pumping case), first two terms are dominant [17]. Thus, the knowledge of dn/dT and α values as well as their combination, called thermal coefficient of the optical path (TCOP) [18], is crucial for the determination of the thermal lens parameters and, hence, the cavity design. Indeed, non-compensated thermal lens can lead to Abstract A detailed study of thermo-optic properties of 1.5 at.% Yb:Lu 2 O 3 single crystal is performed. Thermooptic dispersion formulas are derived for dn/dT coefficient and thermal coefficient of the optical path. At the wavelength of 1.03 μm, dn/dT = 5.8 × 10 −6 K −1 . High-precision temperature-dependent measurements of the thermal expansion coefficient α are performed. At the room temperature (RT), α = 5.880 ± 0.014 × 10 −6 K −1 . Temperature dependence of the bandgap is analyzed, yielding RT value of E g = 5.15 eV and dE g /dT = -3.7 × 10 −4 eV/K. Sensitivity factor of the thermal lens is calculated for a diodepumped Yb:Lu 2 O 3 crystal versus the pump spot radius and crystal temperature.

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A new Ultra Precision Interferometer for absolute length measurements down to cryogenic temperatures

Cited by 29 publications

References 21 publications

High temperature measurement and characterisation of piezoelectric properties

High temperature measurement and characterisation of piezoelectric properties

Thermal expansion coefficient of single-crystal silicon from 7 K to 293 K

Thermo-optic properties of Yb:Lu2O3 single crystals

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