A new vertical power MOSFET structure with extremely reduced on-resistance

Ueda, Daisuke; Takagi, Hiromitsu; Kano, G.

doi:10.1109/t-ed.1985.21900

Cited by 107 publications

(18 citation statements)

References 9 publications

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“…Adopting trench etching processes from the microelectronics industry, this device generation was superseded by U-shaped trench-gate power MOSFETs [3] eliminating the parasitic JFET resistance [4]. The trench-gated power MOSFET has become the cornerstone for low-voltage power semiconductor switches making possible a continued reduction of on-resistance RDSon by means of cell shrinking techniques [5,6]. The period of successfully increasing cell densities stopped several years ago, realising that further minimization of the on-resistance also involved an adverse Manuscript behaviour affecting device capacitances and switching losses [7].…”

Section: Introductionmentioning

confidence: 99%

Conceptual Study of Sub-600 V IGBTs

Bauer

2015

IEEE Trans. Power Electron.

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Very low voltage, 60 to 600V IGBTs were compared to power MOSFETs with conventional and superjunction drift layers of identical voltage classes using mixed-mode numerical device simulation. This study was done in the light of forthcoming 4 0 0 V c l a s s I G B T s f o r u s e i n E V / H E V v e h i c l e s : t h e 6 0 0 V borderline, which previously separated the bulk of power MOSFET from IGBT applications, has become fragile recently. We find that the 400 V class must not represent a lower limit for IGBTs based on silicon: in fact, LV IGBTs could offer lower losses down to the 60 to 100 V level. Most importantly, low voltage IGBTs may outperform power MOSFETs not only with respect to onstate voltage drop but also regarding switching offering up to 30% lower turn-off losses. The paper presents physics based arguments focusing on the device transconductance to augment these projections. LV IGBTs or hybrid devices (monolithic integration o f M O S F E T p l u s I G B T ) c o u l d b e c o m e l o w e r c o s t , h i g h performance alternatives to SJ power MOSFETs thanks to short development cycles common in mature silicon technologies. Index Terms-Insulated Gate Bipolar Transistor (IGBT), power MOSFET, superjunction power MOSFET, technology trade-off, emitter efficiency.

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Section: Introductionmentioning

confidence: 99%

Conceptual Study of Sub-600 V IGBTs

Bauer

2015

IEEE Trans. Power Electron.

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“…This means that using symmetric MOSFETs implies compromises and diminished performance [2]. Although the asymmetric MOSFETs are not new [3], [4], [5].…”

Section: Introductionmentioning

confidence: 99%

A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors

Kwon

Kuh

Park

et al. 2011

11th International Workshop on Junction Technology (IWJT)

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“…The circuit and device structure requirements for the input and output terminals are different in most environmental industry. This means that using symmetric MOSFETs implies compromises and diminished performance [2]. Although the asymmetric MOSFETs are not new [3], [4], [5].…”

Section: Introductionmentioning

confidence: 99%