A new way of phase identification, of AgGaGeS4∙nGeS2 crystals

Towards the growth of Cu 2 ZnSn 1−x Ge x S 4 thin films by a single-stage process: Effect of substrate temperature and composition

“…However, here a significant loss of Ge takes place, without observing a decrease in the Sn content. From the literature, GeS has a much higher vapor pressure than SnS at 550º C [24][25]. As suggested by Chen et al…”

Non-stoichiometry and point native defects in non-oxide non-linear optical large single crystals: advantages and problems

“…In this case, studying BS technique-grown AgGaS 2 –GeS 2 crystals by a high-precision static membrane method became crucially important for the reliable phase identification of AGGS crystals. 26 Here, the field of the homogeneous solid solution AGGS· n GeS 2 was found between 48 and 62 mol% GeS 2 ( n = 0.5) with the apparent tendency to shrinking of this range with temperature due to retrograde solubility with the high-temperature phase transition ↔ S 2 (Fig. 4).…”

“…16 or more sensitive methods to detect micro-inhomogeneity due to the P – T function proposed in ref. 26. Otherwise, being non-equilibrium, these solid solutions are thermally unstable and their aging with time may lead to the occurrence of micro-crystalline GeS 2 particles.…”

Control of Melt Decomposition for the Growth of High Quality AgGaGeS4 Single Crystals for Mid-IR Laser Applications

“…Consequently, it should be responsible for a multi-nuclei formation observed on samples grown from the melt without seed. 15 Moreover, this supercooling can induce a decomposition of the initial AGGS phase as it was recently reported by Nikolaev et al 16 The use of single crystal seed avoided the supercooling and decomposition effect by providing a starting nucleation point. This allowed to obtain AGGS single crystals whose extracted sample is shown on Figure 4(a).…”