A nitrogen-hyperdoped silicon material formed by femtosecond laser irradiation

Dong, Xiao; Li, Ning; Zhu, Zhen; Shao, Hezhu; Rong, Ximing; Liang, Cong; Sun, Haibin; Gao, Feng; Zhao, Li; Zhuang, Jun

doi:10.1063/1.4868017

Cited by 59 publications

(40 citation statements)

References 24 publications

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“…Therefore, in the present femtosecond-laser-hyperdoped silicon, it is reasonably deduced that N S structure should occupy a considerable fraction and according to our calculations induce sub-band-gap absorption. In our previous works, the infrared spectra of nitrogen hyperdoped sample indeed shows the existence of N S 19 . Certainly, the specific value of N S fraction needs to be further investigated.…”

Section: Discussionmentioning

confidence: 66%

“…To obtain the hyperdoped silicon, which has a stable infrared light absorption after annealing and meanwhile has good crystalline quality, we recently prepared the nitrogen hyperdoped silicon by femtosecond pulse laser irradiation in background gas of NF3 18 19 . In the sample, the nitrogen peak concentration successfully reached 10 20 cm −3 , much higher than the solid solubility limit ~4.5 × 10 15 cm −3 .…”

mentioning

confidence: 99%

“…In addition, it has a sub-band-gap absorption from near- to mid-infrared wavelength range, which is absent in crystalline silicon. What is more important, the absorptance of the sample remains almost unchanged after annealing 18 19 , i.e., it has good thermal stability.…”

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confidence: 99%

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Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon

Zhu

Shao

Dong

et al. 2015

Sci Rep

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We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can introduce intermediate band in the gap. Considering the stability of the single defects and the rapid resolidification following the laser melting process in our sample preparation method, we conclude that the substitutional nitrogen defect, whose fraction was tiny and could be neglected before, should have considerable fraction in the hyperdoped silicon and results in the visible sub-band-gap absorption as observed in the experiment. Furthermore, our calculations show that the substitutional nitrogen defect has good stability, which could be one of the reasons why the sub-band-gap absorptance remains almost unchanged after annealing.

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Section: Discussionmentioning

confidence: 66%

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confidence: 99%

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Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon

Zhu

Shao

Dong

et al. 2015

Sci Rep

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“…As the flux increased, the cone peak height ranged from 2 to 20 μm. By laser-assisted chemical etching and laser ablation processes, micro-structured forests can be created on the silicon surface, which facilitated light absorption [183].…”

Section: Laser-induced Periodic Surface Structurementioning

confidence: 99%

The Fabrication of Micro/Nano Structures by Laser Machining

et al. 2019

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Micro/nano structures have unique optical, electrical, magnetic, and thermal properties. Studies on the preparation of micro/nano structures are of considerable research value and broad development prospects. Several micro/nano structure preparation techniques have already been developed, such as photolithography, electron beam lithography, focused ion beam techniques, nanoimprint techniques. However, the available geometries directly implemented by those means are limited to the 2D mode. Laser machining, a new technology for micro/nano structural preparation, has received great attention in recent years for its wide application to almost all types of materials through a scalable, one-step method, and its unique 3D processing capabilities, high manufacturing resolution and high designability. In addition, micro/nano structures prepared by laser machining have a wide range of applications in photonics, Surface plasma resonance, optoelectronics, biochemical sensing, micro/nanofluidics, photofluidics, biomedical, and associated fields. In this paper, updated achievements of laser-assisted fabrication of micro/nano structures are reviewed and summarized. It focuses on the researchers’ findings, and analyzes materials, morphology, possible applications and laser machining of micro/nano structures in detail. Seven kinds of materials are generalized, including metal, organics or polymers, semiconductors, glass, oxides, carbon materials, and piezoelectric materials. In the end, further prospects to the future of laser machining are proposed.

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“…An effective method to extend the absorption waveband of Si is the hyper-doping technique. In the hyper-doped Si samples, supersaturated impurities (such as S, Se, Te, N, and P) can be doped into the Si surface layer via pulsed laser irradiation or ion implantation [4][5][6][7]. The supersaturated impurities can introduce energy levels and even intermediate bands in the Si bandgap, which can contribute to a broad sub-bandgap absorption [4,8].…”

mentioning

confidence: 99%

Sub-bandgap photo-response of non-doped black-silicon fabricated by nanosecond laser irradiation

Zhao

Chen

et al. 2018

Opt. Lett.

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Non-doped black silicon (b-Si) is fabricated on the surface layer of a near-intrinsic Si substrate by nanosecond (ns) laser direct writing in an argon (Ar) atmosphere. The non-doped samples exhibit a near-unity sub-bandgap (1100∼2500 nm) absorptance of more than 50%. Amazingly, the resistivity of the ns laser irradiated b-Si layer is about five orders of magnitude lower than that of the unprocessed Si substrate. The carrier density of the b-Si layer is about 1×10 cm, according to the Hall effect measurement. Temperature-dependent Hall effect measurements show that the non-doped b-Si layer exhibits an energy level of 0.026 eV below the conduction band minimum (CBM). At last, Si infrared photodiodes are made based on the difference of carrier concentration between the ns laser-processed b-Si layer and the high-resistivity Si substrate. The responsivity of the b-Si photodiode for 1310 nm is up to 256 mA/W at a 10-V reverse bias, which is much higher than that of the reported pure Si bulk-structure photodiodes.

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A nitrogen-hyperdoped silicon material formed by femtosecond laser irradiation

Cited by 59 publications

References 24 publications

Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon

Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon

The Fabrication of Micro/Nano Structures by Laser Machining

Sub-bandgap photo-response of non-doped black-silicon fabricated by nanosecond laser irradiation

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