A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

Liu, Feng; He, Jin‐Sheng; Zhang, Jian; Chen, Yu; Chan, Mansun

doi:10.1109/ted.2008.2006544

Cited by 35 publications

(23 citation statements)

References 37 publications

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“…To solve the problem, some new types of MOSFET have been proposed and studied, such as double-gate (DG) MOSFETs [1][2][3][4][5], FinFET [6], and surrounding-gate (SG) MOSFETs [7][8][9][10][11][12]. In addition, the fabrication processes of the SG device have been presented in [11,12].…”

Section: Introductionmentioning

confidence: 99%

Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs

Mei

et al. 2012

Microelectronics Journal

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Section: Introductionmentioning

confidence: 99%

Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs

Mei

et al. 2012

Microelectronics Journal

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“…¢ZD (r,z) =t,[ �Sinh (iAn)+BnSi nh ( L � Z An)}o (�r) (5) where VGrVGs-VFB , with VGS being gate bias, and VFB the flat-band voltage. Jix) is a Bessel function of the nth…”

Section: Analytic Modelmentioning

confidence: 99%

Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs

Mei

et al. 2011

2011 9th IEEE International Conference on ASIC

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In this work, we investigate analytically quantum mechanical (QM) effects on the threshold voltage (VTH)shift of the surrounding-gate (SO) MOSFETs. We show how VTH is influenced with QM effects with the considerations of (1lO)-silicon (Si) orientation and (100)-Si orientation. When the radius of an SO MOSFET is small «3nm), the VTH shift will be significant, and one should be careful in the use of a device with an extremely small silicon body radius. The analytical results are compared with those obtained by B. Yu et aI., and good agreement is observed.

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“…Integrating left and right sides of (1) derives e e I I I I I I I I I I I I I I I J I I (4) In order to obtain the solution of the surface-potential, in [4] another analytical relationship between ĳ 0 and ĳ S is needed. It can be obtained from (1) as follows: …”

Section: Analytical Potential Solutionmentioning

confidence: 99%

“…Using (4) and (5), channel potentials ĳ 0 and ĳ S can be obtained by Newton-Raphson (NR) method in [4].…”

Section: Analytical Potential Solutionmentioning

confidence: 99%

A potential-based analytic model for monocrystalline silicon thin-film transistors on glass substrates

Wang

Zhang

et al. 2010

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

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In this paper a potential based model for monocrystalline silicon thin film transistor (TFT) systems on glass (SOG) substrate from the accumulation to the strong-inversion region is developed. By solving the complete dimensional (1D) Poisson's equation, the potential distribution in the channel is obtained. The analytic drain current is expressed accurately base on the potential solution. Compared with TCAD simulations, the proposed current model shows less than 1.05% errors, with the doping concentrations ranging from 1.5×10 16 cm -3 to 1.5×10 18 cm -3 and different bias conditions. The proposed model is appropriate for precise and quick circuit simulation. IntroductionThin film transistors (TFT), which are monolithically integrated on a glass substrate system (SOG) [1], have received a great deal of attention as a promising device structure in many appliances [2]. As the device's scaling down, an efficient and accurate compact mode is more important than before in circuit simulation. Recently, many potential based compact models are based on charge sheet approximation [3]. However, there exists no effective compact model applicable for TFT on glass substrate. Therefore, for SOG TFT a more accurate and efficient compact model is needed. In this paper, a method of potential calculation is developed to solve 1-D Poisson's equation in TFT device on glass substrate. Based on the potential solutions, a more accurate current model is obtained. This model is that it offers more accuracy compared with charge-sheet model [3] for a wide range of doping concentrations and bias conditions by using TCAD as a standard. The model here is applicable for Monocrystalline TFT devices.

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A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

Cited by 35 publications

References 37 publications

Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs

Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs

Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs

A potential-based analytic model for monocrystalline silicon thin-film transistors on glass substrates

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