A non‐isolated DC‐DC topology with high voltage rate based on magnetic coupling and voltage multiplier method

Abstract

SummaryIn this study, a novel non‐isolated DC‐DC converter based on magnetic coupling and voltage multiplier technique has been proposed. The output voltage of the suggested converter can be enhanced by selecting the appropriate turn ratio of the coupled inductor. To further improve the voltage gain, a voltage multiplier circuit including the capacitors and diodes has been utilized in this converter. The main features of the proposed converter are a high voltage conversion ratio, high efficiency, and lower peak voltage throughout the semiconductor devices. Besides, there are soft switching conditions throughout the diodes of the presented topology, which leads to reducing the reverse recovery losses of the diodes and subsequently improving the overall efficiency of the system. Also, only one insulated‐gate field‐effect transistor (MOSFET) has been used in the structure of the converter. Thus, the switch with lower on‐state resistance can be selected for the suggested converter that decreases the conduction losses. To prove the performance of the suggested structure, the operational analysis, mathematical descriptions, efficiency analysis, and comparison survey with similar structures in the literature have been described. Finally, a laboratory prototype with 200 W output power with 95.14% load efficiency, 20 V input voltage, and 260 V output voltage at 50 kHz switching frequency has been provided.