Predicting the cooling profile of layer melt crystallization
based
on the product purity or layer growth rate is an important practical
topic. Herein, a numerical algorithm is proposed to give an approximate
but quick solution to this inverse heat conduction problem. A thermal
approximation method, in which the conduction heat of constant cooling
temperature equals the required heat of crystallization at a radial
location, was used to determine the cooling profile. The simulation
results were verified using P-xylene as the model substance under
conditions of either a constant layer growth rate or constant crystal
layer purity. The results show that the error of the thermal approximation
method can be neglected, and the experimental results meet the requirements.
The linear relationship between the differential distribution coefficient
and layer growth rate is determined. The cooling temperature at a
constant layer growth rate keeps falling, while at constant layer
purity, it rises after falling.