2010
DOI: 10.1002/mop.25039
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A noncoherent IR‐UWB CMOS receiver for 3–5 GHz application

Abstract: A fully integrated noncoherent IR-UWB CMOS receiver is implemented using 0.18 lm CMOS technology. To remove the bulky and lossy external balun, the receiver contains single to differential circuit embedded in low-noise amplifier (LNA) stages. The LNA stage also includes a tunable LC load for band selection. The measured results show that the sensitivity is À78.9 dBm at 1 Mbps in condition of BER of 10 -3 . The chip size is 2.3 mm  1.3 mm including pads. The consumed current is 20 mA at 1.8 V supply.

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Cited by 2 publications
(6 citation statements)
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“…Similar to this work, buffers are used in [2,4,8,10,11,12,13,14] for measurement purpose. For these LNAs, including this work, the performance except power consumption are measured with buffer, while the reported power consumptions do not include buffers or biasing circuits except for [4,11]. From the comparison, it can be Fig.…”
Section: Test Chip and Measurement Resultsmentioning
confidence: 99%
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“…Similar to this work, buffers are used in [2,4,8,10,11,12,13,14] for measurement purpose. For these LNAs, including this work, the performance except power consumption are measured with buffer, while the reported power consumptions do not include buffers or biasing circuits except for [4,11]. From the comparison, it can be Fig.…”
Section: Test Chip and Measurement Resultsmentioning
confidence: 99%
“…Table 1 summarizes the performance of the presented UWB LNA, with comparison to previously published LNAs. The LNAs in [2][3][4][5][6][7][8][9][10][11] are based on 0.18 lm CMOS technologies, while the rest are based on deeper submicron processes. Similar to this work, buffers are used in [2,4,8,10,11,12,13,14] for measurement purpose.…”
Section: Test Chip and Measurement Resultsmentioning
confidence: 99%
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