IEEE Trans. Instrum. Meas.
 2011
DOI: 10.1109/tim.2011.2124790
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A Nondestructive Method for Accurately Extracting Substrate Parameters of Arbitrary Doping Profile in Nanoscale VLSI

Yiorgos I. Bontzios
1
,
Michael G. Dimopoulos
2
,
A.A. Hatzopoulos
3
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Cited by 1 publication
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