A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers

Curtice, W.R.; Ettenberg, M.

doi:10.1109/tmtt.1985.1133229

Cited by 383 publications

(74 citation statements)

References 14 publications

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“…Another alternative solution would be to create a custom model (ie. based off the Curtice model [54], [55]) to more correctly mimic device behavior.…”

Section: Discussionmentioning

confidence: 99%

Depletion-Mode GaN HEMT Q-Spoil Switches for MRI Coils

Grafendorfer²,

Zhang

et al. 2016

IEEE Trans. Med. Imaging

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Q-spoiling is the process of decoupling an MRI receive coil to protect the equipment and patient. Conventionally, Q-spoiling is performed using a PIN diode switch that draws significant current. In this work, a Q-spoiling technique using a depletion-mode Gallium Nitride HEMT device was developed for coil detuning at both 1.5 T and 3 T MRI. The circuits with conventional PIN diode Q-spoiling and the GaN HEMT device were implemented on surface coils. SNR was measured and compared for all surfaces coils. At both 1.5 T and 3 T, comparable SNR was achieved for all coils with the proposed technique and conventional Q-spoiling. The GaN HEMT device has significantly reduced the required power for Q-spoiling. The GaN HEMT device also provides useful safety features by detuning the coil when unpowered.

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“…Another alternative solution would be to create a custom model (ie. based off the Curtice model [54], [55]) to more correctly mimic device behavior.…”

Section: Discussionmentioning

confidence: 99%

Depletion-Mode GaN HEMT Q-Spoil Switches for MRI Coils

Grafendorfer²,

Zhang

et al. 2016

IEEE Trans. Med. Imaging

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“…Accurate large-signal HEMT models are necessary for computer-aided high-frequency circuit design, especially for power-amplifier design. Many good models have been developed, e.g., [1][2]. However, the existing models with closed-form equations, while good for many existing devices, may not fit well with new devices.…”

Section: Introductionmentioning

confidence: 99%

“…As in closed-form equation models [1][2], ANNs have the adaptability necessary to represent a strong nonlinearlity. While the closed-form equation models must be changed to fit the particular device type, ANNs can support different numbers and types of nonlinear features by simply changing their configurations and training.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear HEMT Modeling Using Artificial Neural Network Technique

Gao

Zhang

et al. 2005

IEEE MTT-S International Microwave Symposium Digest, 2005.

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An improved nonlinear modeling technique for high electron mobility transistors (HEMT) based on the combination of the conventional equivalent circuit and artificial neural network (ANN) modeling techniques is presented. Effective initial values of the artificial neural network for each nonlinear element in HEMT model are evaluated from a semi-analytical parameter extraction technique. A multi-goal DC, S-parameter, and harmonic (DC/S/HB) training process has been formulated. Good agreement is obtained between the model and data of the DC, S parameter, and harmonic performance for a 200um gate width 0.25µm PHEMT (FHX04LG) over a wide range of bias points.

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“…The modified large-signal model is based on the structure of Curtice model [4]. In order to take the device non-linear behaviors into consideration, instead of using its fixed junction capacitances (C,, cgd), channel resistance (Ri), and output resistance &,), we propose the following equations to describe these elements, which are the functions of V,, and v d s [6].…”

Section: The Details Of Modified Large-signal Modelmentioning

confidence: 99%

“…Although there are many existing device models, such as Curtice model, Statz model or EE-HEMT model, have been developed for the large-signal simulation of GaAs FET circuit design [4]- [5]. All of them are either too complicated or can't well describe the device nonlinear behaviors.…”

Section: Introductionmentioning

confidence: 99%

The assessment of output digital spectra in quasi enhancement-mode pHEMTs by a modified large-signal model

Yang

Wang

Lin

et al.

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)

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A modified quasi enhancement-mode pHEMTs RF largesignal model is presented which achieves a good agreement with the device performance. This model is based on the Curtice model, by modifing the formula to have a detailed description about non-linear microwave behaviors. The output digital spectra of quasi enhancement-mode pHEMTs can be well predicted by this model, including the ACPR and non-linear spectra regrowth characteristics.

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A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers

Cited by 383 publications

References 14 publications

Depletion-Mode GaN HEMT Q-Spoil Switches for MRI Coils

Depletion-Mode GaN HEMT Q-Spoil Switches for MRI Coils

Nonlinear HEMT Modeling Using Artificial Neural Network Technique

The assessment of output digital spectra in quasi enhancement-mode pHEMTs by a modified large-signal model

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