2017
DOI: 10.1063/1.4980031
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A nonvolatile memory device with very low power consumption based on the switching of a standard electrode potential

Abstract: We prepared a nonvolatile memory device that could be reversibly switched between a high and a low open-circuit voltage (Voc) regime. The device is composed of a solid electrolyte Li3PO4 film sandwiched between metal Li and Au electrodes: a Li/Li3PO4/Au heterostructure, which was fabricated at room temperature on a glass substrate. The bistable states at Voc ∼ 0.7 and ∼0.3 V could be reversibly switched by applying an external voltage of 2.0 and 0.18 V, respectively. The formation and deformation of an ultrath… Show more

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Cited by 14 publications
(13 citation statements)
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“…In the experiment, the LVS and HVS appear after the 0.2 and 2.0 V voltage applications, respectively, where the only LVS shows the interface resistance [5]. When the 2.0 V is applied, Li-ions transfer inside the electrolyte from Au electrode side toward Li electrode side, which results in the Li-poor condition near the Au electrode.…”
Section: Origin Of Interface Resistancementioning
confidence: 92%
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“…In the experiment, the LVS and HVS appear after the 0.2 and 2.0 V voltage applications, respectively, where the only LVS shows the interface resistance [5]. When the 2.0 V is applied, Li-ions transfer inside the electrolyte from Au electrode side toward Li electrode side, which results in the Li-poor condition near the Au electrode.…”
Section: Origin Of Interface Resistancementioning
confidence: 92%
“…However, the current flow from Au to Li electrodes around 0.5 V suggests the movement of the accumulated Li-ion at the Au electrode toward the Li electrode. The current impedance measurement at the two voltage states reveals that the Nyquist plots of the HVS and LVS have one and two semicircles, respectively [5]. The one semicircle seen in both states originates from the resistance in Li 3 PO 4 .…”
Section: Introductionmentioning
confidence: 91%
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