A normal amorphous silicon-based separate absorption and multiplication avalanche photodiode (SAMAPD) with very high optical gain

Lee, K.H.; Fang, Yean Kuen; Lee, G.Y.

doi:10.1109/16.469399

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Cited by 7 publications

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“…For long-range optical communications while weak light is able to be detected, it is desirable to use a detector with high sensitivity, low dark current, fast response speed, and very high optical gain [1]. In general, large optical gain could be obtained in an avalanche photodiode (APD).…”

Section: Introductionmentioning

confidence: 99%

Excess Noise Factor of a-Si:H/a-SiC:H Separated Absorption and Multiplication Region Superlattice-like Avalanche Photodiodes (SAM-SAPDs)

Shih¹,

Huang²,

Kung³

et al. 2006

Proceedings of the 9th Joint International Conference on Information Sciences (JCIS-06)

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In this paper, an a-Si:H/a-SiC:H separated absorption and multiplication region superlattice avalanche photodiode (SAM-SAPD) using combined effect of band edge discontinuity and build-in potential in p-n junction is designed and fabricated successfully. The formula that describe the relationships among excess noise factor (F e), mean multiplication (e M), and the ionization rate ratio (k s) for this SAM-SAPD are established theoretically. The comparisons between the theoretical calculations and the experimental results for F e vs. M e are discussed.

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Section: Introductionmentioning

confidence: 99%