A novel 25 Gbps electro-optic Pockels modulator integrated on an advanced Si photonic platform

Eltes, Felix; Kroh, M.; Caimi, Daniele; Mai, Christian; Popoff, Youri; Winzer, G.; Petousi, Despoina; Lischke, Stefan; Ortmann, J. Elliott; Czornomaz, Lukas; Zimmermann, Lars; Fompeyrine, J.; Abel, Stefan

doi:10.1109/iedm.2017.8268454

Cited by 24 publications

(26 citation statements)

References 13 publications

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“…Power confinement in the BTO scales with BTO thickness and can therefore be increased by fabricating devices with thicker BTO layers (Supporting Information Section 2). The propagation losses are 9.4 dB/cm (Supporting Information Section 3), comparable to previous reports of hybrid BTO−silicon waveguides, 39,42,45 and can likely be reduced through the development of an optimized fabrication process. 16,42 Racetrack resonators used for index tuning experiments feature two 75-μm-long straight segments with electrodes separated by 5.1 μm to apply an electric field for electro-optic operation (Figure 1d).…”

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confidence: 83%

Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

et al. 2019

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As the optical analogue to integrated electronics, integrated photonics has already found widespread use in data centers in the form of optical interconnects. As global network traffic continues its rapid expansion, the power consumption of such circuits becomes a critical consideration. Electrically tunable devices in photonic integrated circuits contribute significantly to the total power budget, as they traditionally rely on inherently power-consuming phenomena such as the plasma dispersion effect or the thermo-optic effect for operation. Here, we demonstrate ultra-low-power refractive index tuning in a hybrid barium titanate (BTO)− silicon nitride (SiN) platform integrated on silicon. We achieve tuning by exploiting the large electric field-driven Pockels effect in ferroelectric BTO thin films of sub-100 nm thickness. The extrapolated power consumption for tuning a free spectral range (FSR) in racetrack resonator devices is only 106 nW/FSR, several orders of magnitude less than many previous reports. We demonstrate the technological potential of our hybrid BTO− SiN technology by compensating thermally induced refractive index variations over a temperature range of 20°C and by using our platform to fabricate tunable multiresonator optical filters. Our hybrid BTO−SiN technology significantly advances the field of ultra-low-power integrated photonic devices and allows for the realization of next-generation efficient photonic circuits for use in a variety of fields, including communications, sensing, and computing.

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confidence: 83%

Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

et al. 2019

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“…Our concept of high-speed transceivers relies on the monolithic integration of BTO thin films via direct wafer bonding above an interlayer dielectric (ILD) in a standard EPIC flow ( Fig. 1(a)) [16]. The bonding step can be performed on top of any ILD above the front-end-of-line (FEOL) structures.…”

Section: Technology Conceptmentioning

confidence: 99%

A BaTiO₃-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform

Eltes

Mai

Caimi

et al. 2019

J. Lightwave Technol.

137

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To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices on dedicated silicon substrates, incompatible with the fabrication process in silicon foundries. In this work, we demonstrate monolithic integration of electro-optic modulators based on the Pockels effect in barium titanate (BTO) thin films into the back-end-of-line of a photonic integrated circuit (PIC) platform. Molecular wafer bonding allows fully PIC-compatible integration of BTO-based devices and is, as shown, scalable to 200 mm wafers. The PICintegrated BTO Mach-Zehnder modulators outperform conventional Si photonic modulators in modulation efficiency, losses, and static tuning power. The devices show excellent V π L (0.2 Vcm) and V π Lα (1.3 VdB), work at high speed (25 Gbps), and can be tuned at low-static power consumption (100 nW). Our concept demonstrates the possibility of monolithic integration of Pockels-based electro-optic modulators in advanced silicon photonic platforms.

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“…Its largest Pockels tensor element is reported to be r 42 = 1300 pm/V in the unclamped, zero-stress case, and to be r 42 = 700 pm/V in the clamped case [19]. The Pockels effect of BTO has already been exploited in active Si photonic devices [20]- [24] and [53], since BTO can be epitaxially grown on Si [20]. Recently, EO modulators based on BTO have even been monolithically integrated on an advanced Si photonic platform, opening up possibilities towards monolithic integration with electric circuits in a foundry environment [24].…”

mentioning

confidence: 99%

Plasmonic Ferroelectric Modulators

Messner

Eltes

et al. 2019

J. Lightwave Technol.

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Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a temperature stability up to 250°C. Mach-Zehnder interferometer modulators with 10-µm-long phase shifters were operated at 116 Gbit/s PAM-4 and 72 Gbit/s NRZ. Wide and open eye diagrams with extinction ratios beyond 15 dB were found. The fast and robust devices are apt to an employment in industrial environments.

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A novel 25 Gbps electro-optic Pockels modulator integrated on an advanced Si photonic platform

Cited by 24 publications

References 13 publications

Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

A BaTiO₃-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform

Plasmonic Ferroelectric Modulators

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A novel 25 Gbps electro-optic Pockels modulator integrated on an advanced Si photonic platform

Cited by 24 publications

References 13 publications

Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform

Plasmonic Ferroelectric Modulators

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A BaTiO₃-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform