A Novel 3300V Trench IGBT with Hole Extraction Structure for Low Power Loss

Peng, Xin; Li, Zehong; Zhao, Yishang; yang, yang; Ren, Min; Zhang, Jinping; Gao, Wei; Zhang, Bo; Li, Zhaoji; Sun, Defu; Song, Yingxin; Zhu, Kuncun; Li, Donghua

doi:10.1109/ispsd.2019.8757623

Cited by 7 publications

(5 citation statements)

References 10 publications

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“…Figure 8(a) shows the transient power loss of both structures with various R g , where the simulated circuit schematic is shown in the inset. For the same simulated rated current of 75 A at a current density of 75 A cm −2 [1], the average reduction rate of switching power loss (E sw ) from 5 Ω to 650 Ω can be 32.2%, which will compensate the degradation of forward voltage for the tradeoff relationship between the turn-off power loss (E off ) and V CEON [14].…”

Section: Resultsmentioning

confidence: 99%

“…High voltage trench insulated gate bipolar transistors (IGBTs) are widely used in power electronic systems with high breakdown voltage (BV) and low forward voltage drop [1]. Although carrier stored trench bipolar transistors (CSTBTs) [2][3][4] and other novel IGBTs have been applied to enhance performances, there are also existing dV/ dt and dI/ dt noise * Authors to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

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High voltage carrier stored trench bipolar transistor with common anode polysilicon diodes gate structure for low Miller capacitance and low electromagnetic interference noise

Zhao¹,

Li²,

Hu³

et al. 2021

Semicond. Sci. Technol.

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A novel 3300 V high voltage carrier stored trench bipolar transistor (CSTBT) with common anode polysilicon diodes gate structure (CAPD-CSTBT) is proposed. The PN junctions and N+ emitter region in the polysilicon gate structure are beneficial for reducing the Miller capacitance by 88.1% and the input capacitance by 26.0%, while due to the polysilicon PN junction barrier, the forward and reverse gate bias voltage will not be affected. As a result, the transient energy loss could be decreased by 32.2% with the same range of R g. Since the displacement current is shielded by the embedded emitter on the bottom of the CAPD gate structure, the (dI CE /dt)max/I Load is lower than that of the Fin-P-CSTBT by 81.8% on average with the same range of turn-on energy loss. Furthermore, the proposed structure features a 58.7% lower (dV KA /dt)max/V cc value for the free-wheeling diode on average. By Fourier transformation, the proposed structure represents lower amplitudes for the I CE and V KA spectrums during the turn-on period, which is a drastic suppression of electromagnetic interference noise.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High voltage carrier stored trench bipolar transistor with common anode polysilicon diodes gate structure for low Miller capacitance and low electromagnetic interference noise

Zhao¹,

Li²,

Hu³

et al. 2021

Semicond. Sci. Technol.

Self Cite

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“…However, the wide FP region still limits the extraction of the hole in the turn-off process, which increases the turn-off time ( ) and of the device. To speed up the extraction of the hole in the turn-off process, the FP-TIGBT with normally on hole path (HFP-TIGBT) is proposed [18], [19]. However, the normally on hole path increases the since the additional hole path also exists in the forward conduction state.…”

Section: E Offmentioning

confidence: 99%

Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled p-Type Dummy Region

Zhang,

Li,

Zhu

et al. 2024

Chinese J. Elect.

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A novel trench insulated gate bipolar transistor (TIGBT) with a shallow emitter trench controlled P-type dummy region (STCP-TIGBT) is proposed. Compared with the conventional TIGBT with floating P-type dummy region (CFP-TIGBT) and TIGBT with floating P-type dummy region and normally on hole path (HFP-TIGBT), the proposed STCP structure not only speeds up the extraction of excessive holes in the turn-off process but also reduces the Miller plateau charge (Q gc ). Therefore, both the power loss and electromagnetic interference (EMI) noise are significantly reduced. Simulation results show that the Q gc of the proposed device is only 501 nC/cm 2 , which is reduced by 58.5% and 26.4% when compared to the CFP-TIGBT and HFP-TIGBT, respectively. At same on-state voltage drop (V ceon ) of 1.02 V, the turn-off loss (E off ) of the proposed device is 13.49 mJ/cm 2 , which is 64.6% and 67.6% less than those of the CFP-TIGBT and HFP-TIGBT, respectively. Moreover, the reverse recovery dV ak /dt of the freewheeling diode at same turn-on loss (E on ) of 31.8 mJ/cm 2 for the proposed STCP-TIGBT is only 2.15 kV/μs, which is reduced by 91.3% and 57.2% when compared to 24.69 kV/μs and 5.02 kV/μs for the CFP-TIGBT and HFP-TIGBT, respectively. The reduced dV/dt significantly suppresses the electromagnetic interference noise generated by the proposed device.

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“…The turn-on dV/ dt noise can be suppressed by utilizing separated FP [3,4] or floating N region [5], but at the cost of decreased breakdown voltage. The IGBTs with hole path [6][7][8] or side gate [9] can achieve good trade-off relationships between electromagnetic interference (EMI) noise and turn-on loss, but with increased on-state loss. For the Fin P-body IGBT [10] and the split gate IGBT (SG-IGBT) [11], displacement current from the FP is eliminated.…”

Section: Introductionmentioning

confidence: 99%

A novel 3300 V trench IGBT with P-N-doped polysilicon split gate for low EMI noise

Wang¹,

Li²,

Zhao³

et al. 2022

Semicond. Sci. Technol.

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A novel 3300V Trench IGBT with p-n-doped polysilicon split gate (PNSG-IGBT) is proposed for low EMI noise. The reverse-biased polysilicon PN junction is laterally depleted and charged by displacement current during the turn-off transient, which raises electrostatic potential in n-region of the polysilicon PN junction (VN) and electrostatic potential under the gate oxide (VACC) simultaneously. By TCAD simulation, during the turn-on transient, the maximum dVACC/dt is 57.1% lower than that of the SG-IGBT with the same RG and the excess VGE overshoot caused by reverse displacement current is effectively suppressed. Moreover, for the same EON, the maximum reverse recovery dVKA/dt of the FWD can be reduced by 77.3% and 30.7% compared with that of the FP-IGBT and the SG-IGBT respectively, which is of great merit in suppressing dV/dt noise. Consequently, the PNSG-IGBT shows less CM noise at high frequency, especially in the range of 20-40MHz.

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A Novel 3300V Trench IGBT with Hole Extraction Structure for Low Power Loss

Cited by 7 publications

References 10 publications

High voltage carrier stored trench bipolar transistor with common anode polysilicon diodes gate structure for low Miller capacitance and low electromagnetic interference noise

High voltage carrier stored trench bipolar transistor with common anode polysilicon diodes gate structure for low Miller capacitance and low electromagnetic interference noise

Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled p-Type Dummy Region

A novel 3300 V trench IGBT with P-N-doped polysilicon split gate for low EMI noise

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