A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology

Abstract

In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology was fabricated. Sample transistors of different structures and sizes were constructed. Through measurements, it was found that by changing the width of the opening, the threshold voltage of the device could be easily modulated across a larger range. The open-gate device had two working modes with different transconductance. When the gate-source voltage VGS ≤ − 4.5 V, only the open region was conductive, and a new working mechanism modulated the channel current. Corresponding theoretical analysis and calculations showed that its saturation mechanism was related to a virtual gate formed by electron injection onto the surface. Also, the gate-source voltage modulated the open channel current by changing the channel electron mobility through polarization Coulomb field scattering. When used as class-A voltage amplifiers, open-gate devices can achieve effective voltage amplification with very low power consumption.

Field effect transistor based wearable biosensors for healthcare monitoring

“…Various semiconductor materials have been used to fabricate FET, including silicon [ 35 ], metal oxides [ 18 ], III-V materials [ 39 ], transition metal dichalcogenides [ 39 ], organic semiconductors [ 40 ], graphene [ 2 ], carbon nanotubes [ 41 ], and black phosphorous [ 42 ]. Several criteria need to be considered for selecting the semiconductor for a bioFET sensor.…”

Quantum Power Electronics: From Theory to Implementation

“…The first generation of GaN semiconductors, especially high electron mobility transistors, were fabricated in a lateral structure due to initial challenges in the GaN substrates. Despite the success of the radio-frequency power field [4], the limitations of the peak electric field in the lateral configuration led to the low-voltage band (<650 V) in the GaN-based HEMTs. With the recent progress in the commercial GaN bulk substrates, a higher breakdown voltage (V B ) with thinner drift layers is reachable using the new generations of GaN devices in the vertical structure [5].…”

Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions

“…emiconductor heterostructures offer enhanced functionality and improved performance in electric and optoelectronic devices, such as transistors, LED, lasers, and solar cells. These heterostructures are typically designed by selecting materials with similar lattice symmetry and constants, such as SiGe/Si, [1][2][3][4][5] AlGaN/GaN, [6][7][8][9] while also ensuring precise control over the abrupt interfaces. This approach is instrumental in improving device performance; however, there are limitations in the choice of materials to be used in heterostructures.…”