2022
DOI: 10.3390/mi13030464
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A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Abstract: In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si3N4 insulating layer is partially buried between the AlGaN buffer layer and AlN nucleating layer, which introduces a high electric field from the vertical field plate into the internal buffer region of the device. The compound buffer layer can significantly increase the breakdown performance without sacrificing any dynamic characterist… Show more

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