A novel all-optical bistable device in a noninterferometric double p-i(ESQW's)-n diode structure

Kwon, Oh‐Kyong; Kim, K.; Hyun, Sangwon; Choi, Young‐Wan; Lee, E.-H.; Mei, X.B.; Tu, Charng-Gan

doi:10.1109/68.484248

Cited by 10 publications

(3 citation statements)

References 9 publications

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“…They also show strong potential of high packing density because the NOBDs are electrically independent of each other. [25][26][27][28][29][30] Using these devices, we also designed and fabricated multiply interconnected GaAs/AlGaAs shallow quantum wells (MSQWs) p-i-n-i-p type diodes and have found them highly useful in realizing totally non-biased all-optical bistable devices and all-optical oscillators. [25][26][27][28][29][30] A pair of two oppositely polarized p-i-n type diode and n-i-p type diode were monolithically integrated, in which the two intrinsic regions were made of extremely shallow quantum well layers.…”

Section: Multiply Interconnected Quantum Well Optical Devicesmentioning

confidence: 99%

Micro/nano-scale integrated photonic devices and circuits: issues and challenges

Lee¹,

Lee²,

Beom‐Hoan³

et al. 2002

Materials and Devices for Optical and Wireless Communications

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This paper presents an overview of our study on approaching and achieving micron-scale or nano-scale integrated photonic devices and circuits. We examine the scientific and technological issues and challenges concerning the miniaturization and integration of photonic devices and circuits in micron or submicron scale. We will discuss the size effects, quantum effects, high-field effects, proximity effects, optical interference effect, nonlinear effects, and thermal effects in the process of miniaturization and integration of photonic devices and arrays. Models of our study include the devices and arrays of vertical cavity surface emitting microlasers, microdisk lasers, arrayed waveguides, micro-ring resonator devices and arrays and directional couplers, multi-mode interference devices, and spot-size converters. Issues and challenges for two-dimensional integration and three-dimensional integration are discussed based on realisitic examples. We will also discuss similar effects in micro/nano-scale electronics, so that they can provide the lessons from which the micro/nano-photonics can benefit in a complementary manner.

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Section: Multiply Interconnected Quantum Well Optical Devicesmentioning

confidence: 99%

Micro/nano-scale integrated photonic devices and circuits: issues and challenges

Lee¹,

Lee²,

Beom‐Hoan³

et al. 2002

Materials and Devices for Optical and Wireless Communications

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“…Since the first demonstration of the existence of strong roomtemperature excitons in extremely shallow quantum wells [1], electroabsorption in such structures has attracted much attention [2][3][4][5][6][7][8]. Advantages of such extremely shallow quantum well structures over conventional quantum wells include stronger low-field electroabsorption and a sweepout time for photo-generated carriers about two orders of magnitude faster than in PI(MQW)N structures fabricated using deeper wells [2], leading to a higher saturation intensity for optical power [3].…”

Section: Introductionmentioning

confidence: 99%

“…Advantages of such extremely shallow quantum well structures over conventional quantum wells include stronger low-field electroabsorption and a sweepout time for photo-generated carriers about two orders of magnitude faster than in PI(MQW)N structures fabricated using deeper wells [2], leading to a higher saturation intensity for optical power [3]. Device applications of extremely shallow quantum wells have been explored, for example, symmetric self-electro-optic effect devices (S-SEEDs) [4], with very high ON-OFF contrast ratio and large optical bistability loop widths have been reported [6,7]. Also, GaAs/AlGaAs optoelectronic/VLSI integrated light modulators based on extremely shallow quantum wells have been developed for studies of optical systems [8].…”

Section: Introductionmentioning

confidence: 99%

Transition from two-dimensional to three-dimensional electroabsorption in extremely shallow quantum wells

Chen¹,

Allsopp

Batty

2003

Semicond. Sci. Technol.

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Calculations of electroabsorption in extremely shallow quantum wells are performed, accurately incorporating mixing of different subband pairs due to the Coulombic interaction. As the AlAs mole fraction is varied in the barriers of a 100 Å wide Al x Ga 1−x As/GaAs square quantum well, a transition from red to blueshift of the absorption edge with applied electric field occurs at x ∼ 0.003. In a 20 Å wide square well, which more strongly confines the excitons, the redshift of the absorption edge is still observable at low electric field strength in the simulated absorption spectra, even for AlAs mole fractions as low as ∼0.001. However, on increasing the strength of the applied electric field the blueshift becomes apparent. It is demonstrated that inclusion of Coulombic coupling between different subband pairs, particularly between confined states and quasi-continuum states, is essential for a correct prediction of the absorption edge behaviour in extremely shallow quantum wells.

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Logical and relational operations of optical bistable devices operating without external bias

1996

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A novel all-optical bistable device in a noninterferometric double p-i(ESQW's)-n diode structure

Cited by 10 publications

References 9 publications

Micro/nano-scale integrated photonic devices and circuits: issues and challenges

Micro/nano-scale integrated photonic devices and circuits: issues and challenges

Transition from two-dimensional to three-dimensional electroabsorption in extremely shallow quantum wells

Logical and relational operations of optical bistable devices operating without external bias

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