A novel analytical model of a SiC MOSFET

Ramovic, R.; Jevtic, M.M.; Hadzi-Vukovic, J.; Ranđelović, Dragan

doi:10.1109/miel.2002.1003295

Cited by 1 publication

(1 citation statement)

References 7 publications

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“…A good physical model of power devices can be built using the TCAD system software, [5] build a physical model of the Sic MOSFET by using the ATHENA and ATLAS software and however the model will take a lot of time and memory space, and is not suitable for power system simulation analysis applications. Reference [6] propose a mathematical-physical model which has uniform parameters which can describe the static and dynamic characteristics of Sic MOSFET device accurately, but this model is too complex for complex circuit simulation applications. Currently, behavior modeling is most popular, the model is built based on the external characteristics of devices.…”

Section: The All Equivalent Circuit Modelmentioning

confidence: 99%

Sic MOSFET Modeling and Simulation for Pspice

Zhu¹,

Xu²,

Jiao³

et al. 2015

Proceedings of the 2015 International Conference on Advances in Mechanical Engineering and Industrial Informatics

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Abstract. Sic (silicon carbide, Sic), represented by the third generation of semiconductor devices with its superior performance, has obvious advantages on the voltage level, working temperature, switching losses. Then the size, weight, cost of the power electronic conversion may be significantly decreased and making the performance of power electronic systems improved comprehensively. Sic MOSFET has aroused special attention, which shows a tremendous potential on high voltage, high power, high temperature applications. With the deepening of the research, building accurate Sic MOSFET device model is the key to power electronic circuit simulation. Accurate modeling is even more significant to help researchers know more information of device performance and do further design to take advantages of Sic MOSFET. In this paper, a simple PSpice model for Sic MOSFET, CMF20120 is presented, based on the large number of existing models of the power MOSFET discrete devices, according to CMF20120 library files provided by CREE incorporated company. As the comparisons among standard datasheet, the simulation results based on the proposed model match very well.

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Section: The All Equivalent Circuit Modelmentioning

confidence: 99%