A Novel Analytical Model of Ballistic 1-D Schottky Barrier GAA CNTFET Including BTBT Effect

Abstract

In this work a novel analytical model for carbon nanotube transistor (CNTFET) including band to band tunneling (BTBT) effect has been proposed. Consequently, outstanding routes for the design and simulation of ultra-scaled down circuits have become available. Basically, this model has been established on solving analytically the current Landauer integral. Such a solution has been obtained via a set of approximations for Fermi-Dirac distribution function, Wentzel– Kramers–Brillouin (WKB) transmission probability and band to band tunneling probability. In this regard, the suggested approach has been applied to model one dimensional (1-D) Schottky barrier Gate all around (GAA) CNTFET. The introduced model shows a high degree of closure to the experimental data represented in an error of 4.5% for the on current, 1.6% for the threshold voltage and 1.35% for the drain induced barrier lowering (DIBL). The resultant of this effort is reflected in merging of both the accuracy and the speed of the circuit simulator.