A novel approach of using a MBE template for ALD growth of high-κ dielectrics

Lee, K.Y.; Lee, W.C.; Huang, M. L.; Chang, Chun‐Hsiang; Lee, Y.J.; Chiu, Yu-Lun; Wu, Tai–Bor; Hong, M.; Kwo, R.

doi:10.1016/j.jcrysgro.2006.11.262

Cited by 7 publications

(1 citation statement)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The sample growth has been carried out in a unique multichamber MBE system, which consists of a solid-source GaAs-based III-V MBE chamber, two arsenic-free oxide deposition chambers, analysis chambers and UHV wafer transfer modules [16]. In 0.2 Ga 0.8 As 75 Å thick with Si doping of 4×10 17 cm −3 was grown on an n-type GaAs buffer on an n + GaAs (1 0 0) substrate.…”

Section: Methodsmentioning

confidence: 99%

Al₂O₃/Ga₂O₃(Gd₂O₃) passivation on In_0.20Ga_0.80As/GaAs—structural intactness with high-temperature annealing

Lee¹,

Lee²,

Tung³

et al. 2010

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs has been rapidly thermal annealed to 850 °C in N2. The hetero-structure remained intact, with the In0.20Ga0.80As/GaAs interface being free of misfit dislocation and In0.20Ga0.80As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance–voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga2O3(Gd2O3) as a dielectric with an in situ Al2O3 capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 °C, important for fabricating inversion-channel InGaAs metal–oxide–semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology.

show abstract

Section: Methodsmentioning

confidence: 99%

Al₂O₃/Ga₂O₃(Gd₂O₃) passivation on In_0.20Ga_0.80As/GaAs—structural intactness with high-temperature annealing

Lee¹,

Lee²,

Tung³

et al. 2010

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range

Türüt

Yıldız

Karabulut

et al. 2020

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode

Yıldız

Karabulut

Orak

et al. 2021

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductancevoltage (G-V) measurements in the temperature range of 60-320 K. The HfO2 thin film layer was obtained by atomic layer deposition technique (ALD). The main electrical parameters such as ideality factor (n) and barrier height (B0) were determined for Au/Ti/n-GaAs and Au/Ti/HfO2/n-GaAs diodes using current-voltage (I-V) measurement at 300 K. The values of these parameters are 1.07 and 0.77 eV for the reference (Au/Ti/n-GaAs) diode, and 1.30 and 0.94 eV for the Au/Ti/HfO2/n-GaAs MIS diode, respectively. An interfacial charge density value of = 4.14x10 12 Ccm -2 for the MIS diode was calculated from the barrier height difference of ∆Φ = 0.94 − 0.77 = 0.17 V. Depending on these results, the temperature dependent C-V and G-V plots of the device were also investigated. The series resistance (Rs), phase angle, the interface state density (Dit), the real impedance ( ′ ) and imaginary impedance ( ′′ ) were evaluated using admittance measurements. The C and G values increased, whereas ′′ and Z decreased with increasing voltage at each temperature. An intersection point being independent of temperature in the G-V curves appeared at forward bias side (1.4 V), after this intersection point of the G-V plot, the G values decreased with increasing temperature at a given voltage. The intersection points in total versus V curves appeared at forward bias side (1.7 V). The Nyquist spectra was recorded for the MIS structure showing single semicircular arcs with different diameters depending on temperature.

show abstract

A novel approach of using a MBE template for ALD growth of high-κ dielectrics

Cited by 7 publications

References 6 publications

Al₂O₃/Ga₂O₃(Gd₂O₃) passivation on In_0.20Ga_0.80As/GaAs—structural intactness with high-temperature annealing

Al₂O₃/Ga₂O₃(Gd₂O₃) passivation on In_0.20Ga_0.80As/GaAs—structural intactness with high-temperature annealing

Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range

Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode

Contact Info

Product

Resources

About

A novel approach of using a MBE template for ALD growth of high-κ dielectrics

Cited by 7 publications

References 6 publications

Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs—structural intactness with high-temperature annealing

Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs—structural intactness with high-temperature annealing

Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range

Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode

Contact Info

Product

Resources

About

Al₂O₃/Ga₂O₃(Gd₂O₃) passivation on In_0.20Ga_0.80As/GaAs—structural intactness with high-temperature annealing

Al₂O₃/Ga₂O₃(Gd₂O₃) passivation on In_0.20Ga_0.80As/GaAs—structural intactness with high-temperature annealing